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Electronic Structure of Extended Defects in Close-Packed Metals

Published online by Cambridge University Press:  28 February 2011

S. Crampin ,
D.D. Vvedensky ,
J.M. Maclaren  and
M.E. Eberhart
S. Crampin
Affiliation:
The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
D.D. Vvedensky
Affiliation:
The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
J.M. Maclaren
Affiliation:
Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
M.E. Eberhart
Affiliation:
Materials Science and Technology Division. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139
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Abstract

Stacking faults in close-packed metals are known to play a crucial role in determining mechanical behaviour. Extending recent layer Korringa-Kohn-Rostoker calculations on twin faults in a variety of FCC crystals, we study in detail the aluminium defect and develop an atomistic understanding of the modifying behaviour of small concentrations of impurity atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 141: Symposium T – Atomic Scale Calculations in Materials Science , 1988 , 373
Copyright
Copyright © Materials Research Society 1989

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References

[1] MacLaren, J.M., Crampin, S., Vvedensky, D.D. and Eberhart, M.E. (unpublished)Google Scholar
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[4] MacLaren, J.M., Vvedensky, D.D. and Crainpin, S. (unpublished)Google Scholar
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[10] We are at present calculating from first principles the stacking fault energy of the pure aluminium twin stacking fault. Preliminary calculations indicate reasonable agreement with experiment.Google Scholar