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Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts

Published online by Cambridge University Press:  26 February 2011

Winfried Mönch
Winfried Mönch*
Affiliation:
Laboratorium für Festkörperphysik, Gerhard-Mercator-Universität Duisburg, D-47048 Duisburg, Germany
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Abstract

Barrier heights in metal-semiconductor contacts may be modified by interlayers. The effects of atomic interlayers are due to interface dipoles. With the restriction to nearest-neighbor interactions and monovalent interlayer atoms, they may be described as interface molecules which consist of an interlayer and a substrate atom. If the interlayers are thicker than a few atomic layers their two interfaces with the metal and with the semiconductor will be non-interacting. Both types of interfaces are described by the model that interface-induced gap states determine the alignment of the bands and the electronegativity difference describes the charge transfer across the interface. The present paper discusses and analyzes experimental data for H-modified diamond and silicon, Al/Si/GalnP, and metal/ Si3N4/Si Schottky contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 811
Copyright
Copyright © Materials Research Society 1995

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