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Electronic Excitation Induced Solid-State Amorphization in Ge-Sb-Te Alloy

Published online by Cambridge University Press:  23 June 2011

Xian-Bin Li ,
X.Q. Liu ,
Xin Liu ,
Dong Han ,
Z. Zhang ,
X.D. Han  and
S. B. Zhang
Xian-Bin Li
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
X.Q. Liu
Affiliation:
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
Xin Liu
Affiliation:
Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA School of Chemistry, Dalian University of Technology, Dalian 116024, China
Dong Han
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Z. Zhang
Affiliation:
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
X.D. Han
Affiliation:
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
S. B. Zhang
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
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Abstract

On the basis of ab initio molecular dynamics modeling, we show that Ge-Sb-Te alloy under excitation can realize amorphization without going through a liquid phase. The electronic structure analysis further reveals that the excitation mainly involves the Ge s-like states near the valence band maximum. After the phase transition, the coordination number of Ge is reduced from six to four, while the change in the coordination number for Sb is noticeably less.

Keywords

phase transformationstoragelaser-induced reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1370: Symposium YY – Computational Semiconductor Materials Science , 2011 , mrss11-1370-yy09-01
Copyright
Copyright © Materials Research Society 2011

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References

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