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Electronic characterization of single-layer MoS2 sheets exfoliated on SrTiO3

Published online by Cambridge University Press:  29 August 2012

Benedict Kleine Bußmann ,
Kolyo Marinov ,
Oliver Ochedowski ,
Nils Scheuschner ,
Janina Maultzsch  and
Marika Schleberger
Benedict Kleine Bußmann
Affiliation:
Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, 47057 Duisburg, Germany
Kolyo Marinov
Affiliation:
Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, 47057 Duisburg, Germany
Oliver Ochedowski
Affiliation:
Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, 47057 Duisburg, Germany
Nils Scheuschner
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany
Janina Maultzsch
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany
Marika Schleberger
Affiliation:
Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, 47057 Duisburg, Germany
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Abstract

Single layer regions of MoS2 on SiO2 and SrTiO3 were identified by Raman spectroscopy and μ-photoluminescence before Kelvin probe force microscopy was performed. For the already known system MoS2/SiO2 we find 1.839 eV for the direct bandgap, in good agreement with earlier results. On MoS2/SrTiO3 the direct bandgap was determined to be 1.829 eV. From our Kelvin probe data we infer that the SrTiO3 substrate leads to a dipole layer at the interface of the MoS2 single layer. The corresponding μ-PL measurements however show no significant decrease of the bandgap. This shows, that in the case of MoS2 the carrier type as well as concentration is not significantly influenced by the choice of SrTiO3 as the substrate compared to SiO2.

Keywords

scanning probe microscopy (SPM)thin filmsemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1474: Symposium CCC – Local Probing Techniques and In-Situ Measurements in Materials Science , 2012 , mrss12-1474-ccc05-29
Copyright
Copyright © Materials Research Society 2012

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References

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