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The electron transport within bulk wurtzite zinc oxide in response to strong applied electric field pulses

Published online by Cambridge University Press:  12 April 2013

Walid A. Hadi ,
Michael S. Shur  and
Stephen K. O’Leary
Walid A. Hadi
Affiliation:
Department of Electrical and Computer Engineering, University of Windsor, Windsor, Ontario, Canada N9B 3P4
Michael S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A.
Stephen K. O’Leary
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
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Abstract

Strong short electric field pulses are used to generate broadband terahertz radiation. Understanding the transport properties under such conditions is very important for the understanding of numerous terahertz photonic and electronic devices. In this paper, we report on transport simulations of the electrons within bulk wurtzite zinc oxide for pulsed high electric fields, with pulse durations of up to 400 fs. We focus on how key electron transport characteristics, namely the drift velocity and the corresponding average energy, vary with time since the onset of the pulse. For sufficiently high-field strength selections, we find that both of these parameters exhibit peaks. In addition, an electron drift velocity undershoot is observed following this peak. A contrast with the case of gallium nitride is considered; undershoot is not observed for the case of this material. Reasons for these differences in behavior are suggested.

Keywords

II-VItransportationZn
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1577: Symposium XX – Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies , 2013 , mrss13-1577-xx03-22
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Őzgűr, Ű., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, V., Cho, S.-J., and Morkoç, H.;, J. Appl. Phys. 98, 041301 (2005).CrossRefGoogle Scholar
Maruska, H. P. and Tietjen, J. J., Appl. Phys. Lett. 15, 327 (1969).CrossRefGoogle Scholar
Albrecht, J. D., Ruden, P. P., Limpijumnong, S., Lambrecht, W. R. L., and Brennan, K. F., J. Appl. Phys. 86, 6864 (1999).CrossRefGoogle Scholar
Guo, B., Ravaioli, U., and Staedele, M., Comp. Phys. Commun. 175, 482 (2006).CrossRefGoogle Scholar
Bertazzi, F., Goano, M., and Bellotti, E., J. Electron. Mater. 36, 857 (2007).CrossRefGoogle Scholar
Furno, E., Bertazzi, F., Goano, M., Ghione, G., and Bellotti, E., Solid-State Electron. 52, 1796 (2008).CrossRefGoogle Scholar
O'Leary, S. K., Foutz, B. E., Shur, M. S., and Eastman, L. F., Solid State Commun. 150, 2182 (2010).CrossRefGoogle Scholar
Hadi, W. A., Shur, M. S., and O’Leary, S. K., J. Appl. Phys. 112, 033720 (2012).CrossRefGoogle Scholar
Hadi, W. A., Chowdhury, S., Shur, M. S., and O’Leary, S. K., J. Appl. Phys. 112, 123722 (2012).CrossRefGoogle Scholar
Hadi, W. A., Shur, M. S., and O’Leary, S. K., J. Mater. Sci.: Mater. Electron. 24, 2 (2013).Google Scholar
Adachi, S., Properties of Group-IV, III-V, and II-VI Semiconductors (Wiley & Sons, Chichister, 2005).CrossRefGoogle Scholar