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Electron Spin Resonance Investigations on Porous Silicon

Published online by Cambridge University Press:  28 February 2011

B.K. Meyer ,
D.M. Hofmann ,
P. Christmann ,
W. Stadler ,
A. Nikolov ,
A. Scharmann  and
A. Hofstaetter
B.K. Meyer
Affiliation:
Physik-Department, E 16, Technische Universität München, James-Franck-Str. 1 D-85747 Garching, Germany
D.M. Hofmann
Affiliation:
Physik-Department, E 16, Technische Universität München, James-Franck-Str. 1 D-85747 Garching, Germany
P. Christmann
Affiliation:
Physik-Department, E 16, Technische Universität München, James-Franck-Str. 1 D-85747 Garching, Germany
W. Stadler
Affiliation:
Physik-Department, E 16, Technische Universität München, James-Franck-Str. 1 D-85747 Garching, Germany
A. Nikolov
Affiliation:
Physik-Department, E 16, Technische Universität München, James-Franck-Str. 1 D-85747 Garching, Germany
A. Scharmann
Affiliation:
I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
A. Hofstaetter
Affiliation:
I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
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Abstract

The defect properties of as-etched, annealed and thermally oxidized nano-porous Si as well as self supporting macro-porous silicon layers are studied by electron paramagnetic resonance (EPR), photoluminescence (PL), optically detected magnetic resonance (ODMR), and electron nuclear double resonance (ENDOR). The paramagnetic defects observed are dangling bonds closely related to the Pb-center, the Si/SiO2 interfacial defect. In EPR a minimum defect density of 1016 cm−3 is observed for as-etched material, it reaches a maximum of 8 x 1018 cm−3 for samples annealed around 400°C. We quantitatively correlate the defect density with hydrogen desorption data and luminescence efficiency. In the ODMR experiments the same dangling bond centers are observed on the 1.7 eV luminescence band, but with increased sensitivity in the infra-red emission band at 1.15 eV. Electron nuclear double resonance experiments show that the dangling bonds are not solely bonded to Si neighbors but involve hydrogen and fluorine.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 453
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 see Proceedings of the MRS Fall Meeting, Boston 1992 Google Scholar
2 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990)Google Scholar
3 Brandt, M.S., Fuchs, H.D., Stutzmann, M., Weber, J., and Cardona, M., Solid State Commun. 81, 307 (1992)Google Scholar
4 Tischler, M.A., Colins, R.T., Statis, J.H, and Tsang, J.C., Appl. Phys. Lett. 60, 6393 (1992)Google Scholar
5 Petrova Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F., and Lehmann, V., Appl. Phys. Lett. 61, 943 (1992)Google Scholar
6 Bhat, S.V.. Jayaram, K., Victor, D., Muthu, S., and Sood, A.K., Appl. Phys. Lett. 60, 2116 (1992)Google Scholar
7 Ookubo, N., Ono, H., Ochiai, Y., Mochizuki, Y., and Matsui, S., Appl. Phys. Lett. 61, 2569 (1992)Google Scholar
8 Prokes, S.M., Carlos, W.E., and Bermudez, V.M., Appl. Phys. Lett. 61, 1447 (1992)Google Scholar
9 Brandt, M.S. and Stutzmann, M., Appl. Phys. Lett. 61, 2569 (1992)Google Scholar
10 Uchida, Y., Koshida, N., Koyama, H., and Yamamoto, Y., Appl. Phys. Lett. 63, 961 (1993)Google Scholar
11 Yokomichi, H., Takakura, H., and Kondo, M., Jpn. J. Appl. Phys. 32, L365 (1993)Google Scholar
12 Mao, J.C., Jia, Y.Q., Fu, J.S., Wu, E., Zhang, B.R., Zhang, L.Z., and Qin, G.G., Appl. Phys. Lett. 62, 1408 (1993)Google Scholar
13 Cheung, W.Y., Wong, S.P., Wilson, I.H., Kan, C.F., and Hark, S.K., Mat. Res. Symp. Proceed. 283, 155 (1993)Google Scholar
14 Rong, F.C., Harvey, J.F., Poindexter, E.H., and Gerardi, G.J., Appl. Phys. Lett. 63, 920 (1993)Google Scholar
15 von Bardeleben, H.J., Stievenard, D., Grosman, A., Ortega, C., and Siejeka, J. Phys. Rev. B 47, 10899 (1993)Google Scholar
16 McMahon, T.J. and Xiao, Y., Appl. Phys. Lett. 63, 1657 (1993)Google Scholar
17 Fu, J.S., Mao, J.C., Wu, E., Jia, Y.Q., Zhang, B.R., Zhang, L.Z., Qin, G.G., Wui, G.S., and Zhang, Y.H., Appl. Phys. Lett. 63, 1830 (1993)Google Scholar
18 Meyer, B.K., Hofmann, D.M., Stadler, W., Petrova-Koch, V., Koch, F., Omling, P., and Emanuelsson, P., Appl. Phys. Lett. 63, 2120 (1993)Google Scholar
19 Meyer, B.K., Petrova-Koch, V., Muschik, T., Linke, H., Omling, P., and Lehmann, V., Appl. Phys. Lett. 63, 1930 (1993) and references thereinGoogle Scholar
20 Lane, P.A., Swanson, L.S., Shinar, J., and Chumbley, S., Mat. Res. Symp. Proceed. 256, 169 (1992)Google Scholar
21 Mochizuki, Y. and Mizuta, M., Mat. Sci. For. 143–147, 1469 (1994)Google Scholar
22 Hofmann, D.M., Meyer, B.K., Stadler, W., Kux, A., Petrova-Koch, V., and Koch, F., Mat. Sci. For. 143–147, 1459 (1994)Google Scholar
23 Petrova-Koch, V., Kux, A., Müller, F., Muschik, T., Koch, F., and Lehmann, V., Mat. Res. Symp. Proc. 256, 41 (1992)Google Scholar
24 Christen, J., Petrova Koch, V., Lehmann, V., Muschik, T., Kux, A., Grundmann, M., and Bimberg, D., 21th Int. Conf. Physics. Semicond., Beijing (1992), unpubl.Google Scholar
25 Carlos, W.E., Appl. Phys. Lett. 50, 1450 (1987)Google Scholar
26 Brower, K.L., Phys. Rev. B 33, 4471 (1986) and references thereinGoogle Scholar
27 Street, R.A., J. Non-Cryst. Solids 77/78, 1 (1985)Google Scholar
28 Depinna, S.P. and Dunstan, D.J., Phil. Mag. B 50, 579 (1984)Google Scholar
29 Pickering, C., Beale, M.J., Robins, D.J., Pearson, P.J., and Greef, R., J. Phys. C 17, 6535 (1984)Google Scholar
30 Mochizuki, Y., Mizuta, M., Matsui, S., and Ohkubo, N., Phys. Rev. B 46, 12353 (1992)Google Scholar
31 Petrova-Koch, V., Muschik, T., Kovalev, D.I., Koch, F., and Lehmann, V., Mat. Res. Symp. Proc. 283, 178 (1992)Google Scholar
32 Kovalev, D.I., Yaroshetzkii, I.D., Muschik, T., Petrova-Koch, V., and Koch, F., Appl. Phys. Lett. 64, 214 (1994)Google Scholar
33 Chen, X., Uttamchandani, D., Trager-Cowan, C., and O'Donell, K.P. Semicond. Sci. Technol. 8, 92 (1993)Google Scholar
34 Lee, K.M., Kimerling, L.C., Bagley, B.G., and Quinn, W.E., Solid State Commun. 57, 615 (1986) and references thereinGoogle Scholar
35 Meyer, B.K., Hofmann, D.M., Stadler, W., Petrova-Koch, V., Koch, F., Emanuelsson, P., and Omling, P., J. Luminescence 57, 130 (1993)Google Scholar
36 Meyer, B.K., Nikolov, A., Graber, A., Hofstaetter, A., and Scharmann, A., unpublishedGoogle Scholar
37 Brandt, M.S. and Stutzmann, M., in Porous Silica, ed. by Feng, Z.C. and Tsu, R. (World Scientific, Singapore, 1994)Google Scholar