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Electron Spin Resonance and Ultra Violet (UV) Photoluminescence of Ge Implanted CuGaSe2 Thin Films Prepared by the CCSVT (Chemical Close-spaced Vapor Transport) Technique

Published online by Cambridge University Press:  01 February 2011

Serge Doka ,
Jasmin Hofstetter ,
Marin Rusu ,
Ernest Arushanov ,
Lips Klaus ,
Thomas Schedel-Niedrig  and
Martha Ch. Lux- Steiner
Serge Doka
Affiliation:
[email protected], Hahn- Meitner Institut GmbH Berlin, Heterogeneous Material Systems, SE2, Glienicker Strasse 100, Berlin, D-14109, Germany, ++493080622563, ++493080623199
Jasmin Hofstetter
Affiliation:
[email protected], Hahn- Meitner Institut GmbH Berlin, Glienicker Strasse 100, Berlin, D-14109, Germany
Marin Rusu
Affiliation:
[email protected], Hahn- Meitner Institut GmbH Berlin, Glienicker Strasse 100, Berlin, D-14109, Germany
Ernest Arushanov
Affiliation:
[email protected], Institute of Applied Physics, Academy of Sciences,Academiei 5, Chisinau, 277028, Moldova
Lips Klaus
Affiliation:
[email protected], Hahn- Meitner Institut GmbH Berlin, Kekulestrasse 5, Berlin, D-12489, Germany
Thomas Schedel-Niedrig
Affiliation:
[email protected], Hahn- Meitner Institut GmbH Berlin, Glienicker Strasse 100, Berlin, D-14109, Germany
Martha Ch. Lux- Steiner
Affiliation:
[email protected], Hahn- Meitner Institut GmbH Berlin, Glienicker Strasse 100, Berlin, D-14109, Germany
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Abstract

Non-equilibrium ion implantation of Ge in p-type polycrystalline thin film CuGaSe2 (CGSe) prepared by Chemical Close-spaced Vapor Transport (CCSVT) has been performed with the goal to achieve n-type doping of this chalcopyrite semiconductor. Using Electron Spin Resonance (ESR) it is shown that Ge implantation induces a paramagnetic specie at g = 2.003. A model is proposed that assigns the ESR signal to electrons trapped by donor states that are electrically inactive. Moreover, UV photoluminescence of Ge implanted films has evidenced a new peak emission at 1.47 eV, which is resolved as a radiative recombination of a hole bound to the native copper vacancy and an electron bound to a deep donor with an ionization energy of ED =360±10 meV.

Keywords

electron spin resonanceion-implantationluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y12-19
Copyright
Copyright © Materials Research Society 2007

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