Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-12T05:09:51.512Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Microscopy Study of the Structure of the £ =9, 11 Symmetrical Tilt Grain Boundaries in Germanium

Published online by Cambridge University Press:  15 February 2011

Anne-Marie Papon ,
Maurice Petit ,
Georges Silvestre  and
Jean-Jacques Bacmann
Anne-Marie Papon
Affiliation:
Centre d'Etudes Nucléaires, DMG/SER, 85 X, 38041 GRENOBLE CEDEX, FRANCE
Maurice Petit
Affiliation:
Centre d'Etudes Nucléaires, DMG/SER, 85 X, 38041 GRENOBLE CEDEX, FRANCE
Georges Silvestre
Affiliation:
Centre d'Etudes Nucléaires, DMG/SER, 85 X, 38041 GRENOBLE CEDEX, FRANCE
Get access

Abstract

The structure of the £=9 and £=11 tilt grain boundaries about [011] axis is studied by means of complementary electron microscopy techniques. Using α'fringes it is shown that the £=1l boundary translations amount to a large expansion and that the £ =9 is little dilated while the translation along [411] is not accessible. The diffraction technique yields the missing result : there is no translation along [411] : the boundary periodicity is not in both cases that of the coincidence site lattice. A supplementary symmetry occurs in the £ =9 boundary which leads to a shortest periodicity. The observations are consistent with the model of five- and seven-fold rings describing the £ =9 boundary. A model, without dangling bond, which consists in a combination of the £ =9 and £ =3 (coherent twin) patterns, is proposed for the £ =ll boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 27
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Krivanek, O.L. et al. , Phil. Mag. 36, 931 (1977).Google Scholar
2. Bourret, A. and Desseaux, J. Phil. Mag. A39, 405 (1979).CrossRefGoogle Scholar
3. Föll, H. and Ast, D.G. Phil. Mag. A39, 589 (1979).CrossRefGoogle Scholar
4. D'Anterroches, C. et al. in : Electron Microscopy 1, Brederoo, P. and Boom, G. eds. (1980) pp. 316–317.Google Scholar
5. Carter, C.B. et al. , Phil. Mag. A43, 441 (1981).CrossRefGoogle Scholar
6. Vlacavas, D. and Pond, R.C., 2nd Oxford conf. on Microscopy of semiconducting Materials (1981).Google Scholar
7. Bourret, A. et al. , 2nd Oxford conf. on Microscopy of semiconducting materials (1981).Google Scholar
8. Pond, R.C., J. Microsc. 116, 105 (1979).Google Scholar
9. Guan, D.Y. and Sass, S.L. Phil. Mag. A39, 293 (1979).Google Scholar
10. Balluffi, R.W. et al. , Phil. Mag. 26, 585 (1972).Google Scholar
11. Sass, S.L. et al. , Phil. Mag. 31, 559 (1975).Google Scholar
12. Shapink, F.W. and Mertens, F.J.M., Scripta. Met. 15, 611 (1981).Google Scholar
13. Bacmann, J.J. et al. , Mat. Res. Bull. 15, 261 (1980).Google Scholar
14. Papon, A.M. et al. , to be published.Google Scholar
15. Bollmann, W., Crystal Defects in Crystalline Interfaces (Berlin Springer, 1970).Google Scholar
16. Pond, R.C. and Bollmann, W., Phil. Trans. Roy. Soc. A292, 449 (1979).Google Scholar