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Electron Irradiation of 4H SiC by TEM: An Optical Study

Published online by Cambridge University Press:  21 March 2011

S. G. Sridhara ,
P. O. Å. Persson ,
F. H. C. Carlsson ,
J. P. Bergman ,
E. Janzén ,
G. Evans  and
J. W. Steeds
S. G. Sridhara
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
P. O. Å. Persson
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
F. H. C. Carlsson
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
J. P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics, University of Bristol, BS8 1TL Bristol, UK
G. Evans
Affiliation:
Department of Physics, University of Bristol, BS8 1TL Bristol, UK
J. W. Steeds
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
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Abstract

An intrinsic defect spectrum, commonly observed after ion-implantation, electron, proton or neutron irradiation and even after SIMS measurements is investigated using photoluminescence techniques. The spectrum is associated with carbon related isoelec-tronic centers having a pseudodonor like behaviour. Vacancy-interstitial pair complexes are tentatively suggested as the defect centers responsible for this intrinsic spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H6.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Egilsson, T., Bergman, J.P., Ivanov, I.G., Henry, A. and Janzén, E., Phys. Rev. B, 59, 1956 (1999).Google Scholar
2. Henry, A., Magnusson, B., Linnarsson, M.K., Ellison, A., Syvjrvi, M., Yakimova, R. and Janzn, E., to be published in Silicon Carbide and Related Materials, Materials Science Forum, Vols. 353–356.Google Scholar
3. Sorman, E., Son, N.T., Chen, W.M., Kordina, O., Hallin, C., Janzén, E., Phys. Rev. B, 61, 2613 (2000).Google Scholar
4. Steeds, J.W., Carosella, F., Evans, G.A., Ismail, M.M., Danks, L.R. and Voegeli, W., to be published in Silicon Carbide and Related Materials, Materials Science Forum, Vols. 353–356.Google Scholar
5. Sturge, M.D., Cohen, E. and Rogers, K.F., Phys. Rev. B, 15, 3169 (1977).Google Scholar
6. Egilsson, T., Ivanov, I.G., Henry, A. and Janzén, E., Materials Science Forum, 338–342, 647 (2000).Google Scholar
7. Bergman, J.P., Kordina, O. and Janzén, E., Phys. Status Solidi A, 162, 65 (1997).Google Scholar
8. Son, N.T., Hai, P.N., Huy, P.T., Gregorkiewicz, T., Ammerlaan, C.A.J., Lindstrm, J.L., Chen, W.M., Monemar, B. and Janzen, E., Physica B, 273–274, 655 (1999).Google Scholar