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Electron Holographic Characterization of Ferroelectric Thin Films

Published online by Cambridge University Press:  22 February 2011

Xiao Zhang  and
David C. Joy
Xiao Zhang
Affiliation:
Electron Microscopy Facility, The University of Tennessee, Knoxville, TN 37996, and Metal and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN
David C. Joy
Affiliation:
Electron Microscopy Facility, The University of Tennessee, Knoxville, TN 37996, and Metal and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

In this paper we will present recent experimental results, using electron holography and electron interferometry, of studies of ferroelectric domain walls in BaTiO3 thin films. Unlike conventional TEM diffraction contrast imaging of ferroelectrics, the new technique that we have developed not only allows direct visualization of ferroelectric domain walls and electrostatic field distributions in the vicinity of the domain wall, but also enables quantitative measurement of domain wall width and local polarization. We have measured 90° domain wall width to be between 20 to 50 Å for a BaTiO3 thin specimen. The variation of polarization across the domain wall will be shown to be close to that predicted by the Zhirnov model. The value of the measured spontaneous polarization is about 1.5×10−5 C/cm2, which is closed to the bulk macroscopically measured value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 487
Copyright
Copyright © Materials Research Society 1993

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References

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