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Electron Cyclotron Resonance Hydrogen Plasma Induced Defects in Thermally Grown and Spuiter Deposited SiO2
Published online by Cambridge University Press: 16 February 2011
Abstract
In this study we show that upon exposure to electron cyclotron resonance hydrogen plasmas, both thermally grown and sputter deposited oxides are degraded, resulting in large shifts of flat band voltage, and increases in fixed charge and interface state density.
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- Copyright © Materials Research Society 1991