Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T18:42:05.752Z Has data issue: false hasContentIssue false

Electron carrier concentration dependent magnetization in ZnO:Co and ZnO:Mn thin films

Published online by Cambridge University Press:  01 February 2011

Zheng Yang
Affiliation:
[email protected], University of California at Riverside, Department of Electrical Egineering, 900 University Avenue (Bourns Hall B144), Riverside, CA, 92521, United States, 951-827-7723, 951-827-2425
Maurizio Biasini
Affiliation:
[email protected], University of California at Riverside, Department of Physics and Astronomy, Riverside, CA, 92521, United States
Leelaprasanna J Mandalapu
Affiliation:
[email protected], University of California at Riverside, Quantum Structures Laboratory, Department of Electrical Egineering, Riverside, CA, 92521, United States
Zheng Zuo
Affiliation:
[email protected], University of California at Riverside, Quantum Structures Laboratory, Department of Electrical Egineering, Riverside, CA, 92521, United States
Ward P Beyermann
Affiliation:
[email protected], University of California at Riverside, Department of Physics and Astronomy, Riverside, CA, 92521, United States
Jianlin Liu
Affiliation:
[email protected], University of California at Riverside, Quantum Structures Laboratory, Department of Electrical Egineering, Riverside, CA, 92521, United States
Get access

Abstract

Co and Mn ions were implanted into n-type ZnO thin films with different electron carrier concentrations. X-ray diffraction measurements show that the ZnO:Co and ZnO:Mn thin films are of high crystallinity. From magnetization measurements, ferromagnetism was observed in both n-type ZnO:Co and n-type ZnO:Mn thin films with Curie temperatures well-above room temperature. Furthermore, the electron carrier concentration dependence of the saturated magnetization was measured in both types of thin films, and our results support an electron-mediated mechanism for ferromagnetism in ZnO:Co, as predicted by theory. However, our measurements seem to contradict theory for ZnO:Mn, which only predicts long-range ferromagnetism for p-type mediated material.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Liu, C., Yun, F., and Morkoç, H., J. of Mater. Sci: Mater. Electron. 16, 555 (2005).Google Scholar
[2] Pearton, S. J., Heo, W. H., Ivill, M., Norton, D. P., and Steiner, T., Semicond. Sci. and Technol. 19, R59 (2004).10.1088/0268-1242/19/10/R01Google Scholar
[3] Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000).10.1126/science.287.5455.1019Google Scholar
[4] Sato, K. and Katayama-Yoshida, H., Semicond. Sci. and Technol. 17, 367 (2002).10.1088/0268-1242/17/4/309Google Scholar
[5] Wang, Q., Sun, Q., Jena, P., and Kawazoe, Y., Phys. Rev. B 70, 052408 (2004).Google Scholar
[6] Lee, H. J., Jeong, S. Y., Cho, C. R., and Park, C. H., Appl. Phys. Lett. 81, 4020 (2002).10.1063/1.1517405Google Scholar
[7] Norton, D. P., Overberg, M. E., and Pearton, S. J. et al. , Appl. Phys. Lett. 83, 5488 (2003).10.1063/1.1637719Google Scholar
[8] Rode, K., Anane, A., and Mattana, R. et al. , J. Appl. Phys. 93, 7676 (2003).10.1063/1.1556115Google Scholar
[9] H, J.. Park, Kim, M. G., and Jang, H. M. et al. , Appl. Phys. Lett. 84, 1338 (2004).Google Scholar
[10] Ramachandran, S., Tiwari, A., and Narayan, J., Appl. Phys. Lett. 84, 5255 (2004).10.1063/1.1764936Google Scholar
[11] Bouloudenine, M., Viart, N., and Colis, S. et al. , Appl. Phys. Lett. 87, 052501 (2005).10.1063/1.2001739Google Scholar
[12] Song, C., Geng, K. W., Zeng, F., Wang, X. B., Sheng, Y. X., Pan, F., Xie, Y. N., Liu, T., Zhou, T. T., and Fan, Z., Phys. Rev. B 73, 024405 (2006).Google Scholar
[13] Jin, Z., Fukumura, T., and Kawasaki, M. et al. , Appl. Phys. Lett. 78, 3824 (2001).10.1063/1.1377856Google Scholar
[14] Ueda, K., Tabata, H., and Kawai, T., Appl. Phys. Lett. 79, 988 (2001).10.1063/1.1384478Google Scholar
[15] Jung, W., An, S.-J., and Yi, G.-C. et al. , Appl. Phys. Lett. 80, 4561 (2002).10.1063/1.1487927Google Scholar
[16] Sharma, P., Gupta, A., Rao, K. V., Owens, Frank J., Sharma, R., Ahuja, R., Guillen, J. M. Osorio, Johansson, B., and Gehring, G. A., Nat. Mater. 2, 673 (2003).Google Scholar
[17] Norton, D. P., Pearton, S. J., and Hebard, A. F. et al. , Appl. Phys. Lett. 82, 239 (2003).Google Scholar
[18] Heo, Y. W., Ivill, M. P., Ip, K., Norton, D. P., Pearton, S. J., Kelly, J. G., Rairigh, R., Hebard, A. F., and Steiner, T., Appl. Phys. Lett. 84, 2292 (2004).10.1063/1.1690111Google Scholar
[19] Fukumura, T., Jin, Z., Kawasaki, M., Shono, T., Hasegawa, T., Koshihara, S., and Koinuma, H., Appl. Phys. Lett. 78, 958 (2001).10.1063/1.1348323Google Scholar
[20] Kolesnik, S. and Dabrowski, B., J. Appl. Phys. 96, 5379 (2004).10.1063/1.1755428Google Scholar
[21] Kim, S. S. Moon, J. H., lee, B. -T., Song, O. S., and Je, J. H., J. Appl. Phys. 95, 454 (2004).10.1063/1.1632547Google Scholar
[22] Alaria, J., Bieber, H., and Colis, S. et al. , Appl. Phys. Lett. 88, 112503 (2006).Google Scholar
[23] Liu, X. C., Shi, E. W., Chen, Z. Z., Zhang, H. W., Xiao, B., and Song, L. X., Appl. Phys. Lett. 88, 252503 (2006).Google Scholar
[24] Zhang, T., Song, L. X., Chen, Z. Z., Shi, E. W., Chao, L. X., and Zhang, H. W., Appl. Phys. Lett. 89, 172502 (2006).10.1063/1.2364122Google Scholar
[25] Venkatesan, M., Stamenov, P., Dorneles, L. S., Gunning, R. D., Bernoux, B., and Coey, J. M. D., Appl. Phys. Lett. 90, 242508 (2007).Google Scholar
[26] Schwartz, D. A. and Gamelin, D. R., Adv. Mater. 16, 2115 (2004).Google Scholar
[27] Kittilstved, K. R., Schwartz, D. A., Tuan, A. C., Heald, S. M., Chambers, S. A., and Gamelin, D. R., Phys. Rev. Lett. 97, 037203 (2006).Google Scholar
[28] Sluiter, M. H. F., Kawazoe, Y., Sharma, P., Inoue, A., Raju, A. R., Rout, C., and Waghmare, U. V., Phys. Rev. Lett. 94, 187204 (2005).Google Scholar
[29] Kittilstved, K. R., Norberg, N. S., and Gamelin, D. R., Phys. Rev. Lett. 94, 147209 (2005).Google Scholar
[30] Gu, Z. B., Lu, M. H., Wang, J., Wu, D., Zhang, S. T., Meng, X. K., Zhu, Y. Y., Zhu, S. N., Chen, Y. F., and Pan, X. Q., Appl. Phys. Lett. 88, 082111 (2006).10.1063/1.2178466Google Scholar
[31] Xu, H. Y., Liu, Y. C., Xu, C. S., Liu, Y. X., Shao, C. L., and Mu, R., Appl. Phys. Lett. 88, 242502 (2006).Google Scholar
[32] Yan, W., Sun, Z., Liu, Q., Li, Z., Shi, T., Wang, F., Qi, Z., Zhang, G., Wei, S., Zhang, H., and Chen, Z., Appl. Phys. Lett. 90, 242509 (2007).10.1063/1.2749179Google Scholar
[33] Wan, Q., Appl. Phys. Lett. 89, 082515 (2006).Google Scholar
[34] Ivill, M., Pearton, S. J., Heo, Y. W., Kelly, J., Hebard, A. F., and Norton, D. P., J. Appl. Phys. 101, 123909 (2007).Google Scholar
[35] Lee, S., Kim, D. Y., Shon, Y., and Yoon, C. S., Appl. Phys. Lett. 89, 022120 (2006).Google Scholar
[36] Venkatesan, M., Fitzgerald, C. B., Lunnery, J. G., and Coey, J. M. D., Phys. Rev. Lett. 93, 177206 (2004).10.1103/PhysRevLett.93.177206Google Scholar
[37] Coey, J. M. D., Venkatesan, M., and Fitzgerald, C. B., Nat. Mater. 4, 173 (2005).Google Scholar