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Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

Published online by Cambridge University Press:  25 February 2011

S. Kar ,
A. Pandey  and
R. K. Dwivedi
S. Kar
Affiliation:
Indian Institute of Technology, Kanpur - 208016, India.
A. Pandey
Affiliation:
Indian Institute of Technology, Kanpur - 208016, India.
R. K. Dwivedi
Affiliation:
Indian Institute of Technology, Kanpur - 208016, India.
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Abstract

Si/In203 diodes have been prepared by e-beam evaporation of In203 tablets. Annealing of these devices was carried out in N2 and H2 /N2 mixture at 1 atm. in the temperature range of 400–800°C. Experimental data indicated a large increase in the Schottky barrier height and growth of interfacial oxide during annealing. The interface state density was reduced by a factor of 2, but the results indicated the increase in the barrier height to be mainly due to reduction of positive fixed charge density.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 301
Copyright
Copyright © Materials Research Society 1987

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References

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