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Electromigration-Induced Drift in Damascene vs. Conventional Interconnects: An Intrinsic Difference

Published online by Cambridge University Press:  10 February 2011

J. Proost ,
I. Samajdar ,
A. Witvrouw  and
K. Maexo
J. Proost
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium
I. Samajdar
Affiliation:
Dept. of Materials Science (MTM), de Croylaan 2, B-3001 Leuven, Belgium
A. Witvrouw
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maexo
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium,also at ESAT-INSYS, K. U. Leuven
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Abstract

The electromigration (EM) behaviour of damascene Al(Cu)-interconnects has been studied for the first time by drift experiments and results directly compared to plasma-etched lines. For the latter EM is known to occur through sequential stages : an incubation period, needed for Cu-depletion, and an Al-drift stage. It is shown that using a damascene implementation, the incubation time significantly increases but the Al-drift velocity does as well. This is demonstrated to be an intrinsic effect, directly related to the technological nature of both metallization schemes. Implications on lifetime prediction at operating conditions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 89
Copyright
Copyright © Materials Research Society 1998

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References

[1] Kaanta, C.W. et al. , Proc. VMIC, 144 (1991)Google Scholar
[2] Kikuta, K., Nakajima, T., Ueno, K. and Kikkawa, T., IEEE Proc. IEDM, 285 (1993)Google Scholar
[3] Licata, T. et al. , MRS Symp. Proc. 309, 87 (1993)10.1557/PROC-309-87Google Scholar
[4] Besser, P.R., Sanchez, J.E., Field, D.P., Pramanick, S. and Sahota, K., MRS Symp. Proc. 473, 217 (1997)10.1557/PROC-473-217Google Scholar
[5] Blech, I.A., J. Appl. Phys. 47, 1203 (1976); erratum J. Appi. Phys. 48, 2648 (1977)10.1063/1.322842Google Scholar
[6] Hu, C.-K., Thin Solid Films 260, 124 (1995)Google Scholar
[7] Jawarani, D., Gall, M, Hernandez, R., Capasso, C. and Kawasaki, H., IEEE Proc. VLS1 Symp., 39 (1997)Google Scholar
[8] Rosenberg, R., AlP Conference Proc. 418, 127 (1997)Google Scholar
[9] Marcus, M.A., Bower, J.E., J. Appl. Phys. 82, 3821 (1997)10.1063/1.365745Google Scholar
[10] Schreiber, H.-U., Solid-St. Electr. 28, 617 (1985)10.1016/0038-1101(85)90134-0Google Scholar
[11] ner, A. Häß, Kristall. u. Technik 9, 1371 (1974)Google Scholar
[12] Small, M.B. and Hu, C.K., Proc. VLSI Multilevel Interconnection Conf., 307 (1996)Google Scholar
[13] Kawasaki, H. and Hu, C.K., IEEE Proc. VLSI Symp., 192 (1996)Google Scholar
[14] Lloyd, J.R. and Clement, J.J., Appl. Phys. Lett. 69, 2486 (1996)10.1063/1.117506Google Scholar
[15] Crowell, C.R., Shih, C.-C. and Tyree, V.C., IEEE Proc. IRPS, 277 (1991)Google Scholar
[16] Failure, Reliability Data Analysis Package, distributed by Destin NV, BelgiumGoogle Scholar
[17] Kim, C. and Morris, J.W., J. Appl. Phys. 73, 4885 (1993)10.1063/1.353806Google Scholar