Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-02T23:04:53.494Z Has data issue: false hasContentIssue false
  • English
  • Français

Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects

Published online by Cambridge University Press:  26 February 2011

M. Finetti ,
H. Ronkainen ,
M. Blomberg  and
I. Suni
M. Finetti
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
H. Ronkainen
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
M. Blomberg
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
I. Suni
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
Get access

Abstract

We have investigated the electromigration resistance of Al-Si/Ti multilayer interconnects. For comparison Al-Si and Al-Si/Ti/Al-Si films were also prepared. The linewidths ranged between 1.6 and 5, um. A temperature-ramp resistance analysis was applied at direct wafer level, to detect electrically transport of material and derive the electromigration kinetic parameters in test vehicles with different geometries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 811
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Howard, J.K., White, J.F. and Ho, P.S., J. Appl. Phys., 49 (1978) 4083.Google Scholar
2. Iyer, S.S. and Ting, C.Y., Proc. 22nd Int. Symp. on Reliability Physics, IEEE Electron Devices and Reliability Society, Las Vegas, Ne, 1984, p. 273.Google Scholar
3. Gardner, D.S., Michalka, T.L., Saraswat, K.C., Barbee, T.W., McVittie, J.P. and Meindl, J.D., IEEE J. on Solid-State Circuits, SC–20, (1985) 94.Google Scholar
4. Pasco, R.W. and Schwartz, I.A., Solid-State Electron., 26 (1983) 445.Google Scholar
5. Blech, I.A., J. Appl. Phys., 67 (1976) 1203.Google Scholar