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Electromigration and Diffusion in Short Al-Ni-Cr Lines

Published online by Cambridge University Press:  10 February 2011

L.C. Jacobs ,
A.H. Verbruggen ,
A.J. Kalkman  and
S. Radelaar
L.C. Jacobs
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
A.H. Verbruggen
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
A.J. Kalkman
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
S. Radelaar
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
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Abstract

To investigate why the formation of electromigration damage in Al lines alloyed with both 0.1 at.% Ni and 0.1 at.% Cr is so effectively suppressed we studied electromigration induced changes in the electrical resistance of short lines. The length of the lines is 4, 6, 8, or 12 µm, the width is 4 µm and the film thickness is 0.3 µm. As previously reported for pure Al lines, depending on current density and sample length, the induced resistance changes fully recover or do not recover after DC stressing for a few hours. The recoverable resistance changes correspond to the build-up or relaxation of mechanical stress and the permanent resistance changes to the formation of a void or hillock. Electron microprobe analysis and resistance measurements after prolonged current stressing provided no evidence for changes in local solute concentration. Therefore diffusion of Al along grain boundaries is regarded as the dominating diffusion process. The activation energy and the pre-exponential factor of this process are determined from the temperature dependence of the relaxation time of the recoverable resistance changes. The activation energy of this process is 0.84±0.03 eV and the pre-exponential factor δD0 = (1.8±0.8)×10−8 cm3/s. At 175 °C the resulting diffusion coefficient is about a factor 70 smaller than that of pure Al. The transition from recoverable to permanent resistance changes is characterized by a constant critical current density -sample length product. It is found that the value of this product for the Al-Ni-Cr lines is two times larger than the value found for pure Al lines. This means that the threshold current density at given sample length for the formation of hillocks or voids is two times larger. Both the slower solvent diffusion and the higher threshold current density contribute positively to a long electromigration lifetime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 275
Copyright
Copyright © Materials Research Society 1998

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References

1. Pintchovski, F., IEEE/IEDM Symp.Proc. 1994, 97.Google Scholar
2. Kalkman, A.J., Verbruggen, A.H., Janssen, G.C.A.M., Lokker, J.P., and Radelaar, S. in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, ed. Cheung, R., Klein, J., Tsubouchi, K., Murakama, M., and Kobayashi, N., (Conf.Proc. ULSI XIII, MRS, Warrendale, PA, 1998) pp. 225–229.Google Scholar
3. Gangulee, A. and d'Heurle, F.M., Appl.Phys.Lett. 19, 76 (1971).10.1063/1.1653828Google Scholar
4. Kim, C.-U., Morris, J.W. Jr., Gdnin, F.Y., and Fluss, M.J. in Materials Reliability in Microelectronics VI, ed. Filter, W.F., Clement, J.J., Oates, A.S., Rosenberg, R., and Lenahan, P.M. (Mat.Res.Res.Proc.428, Pittsburgh, PA, 1996) pp. 213–218.Google Scholar
5. d'Heurle, F.M. and Gangulee, A., in The Nature and Behavior of Grain Boundaries, ed. Hu, H. (Plenum, New York, 1972) pp. 339–370.Google Scholar
6. see for instance: Knowlton, B.D., Clement, J.J., Frank, R.I., and Thompson, C.V. in Materials Reliability in Microelectronics V, ed. Oates, A.S., Filter, W.F., Rosenberg, R., Clement, J.J., Greer, A.L., and Gadepally, K. (Mat.Res.Res.Proc.391, Pittsburgh, PA, 1995) pp. 189–196.Google Scholar
7. Verbruggen, A.H., van den Homberg, M.J.C., Jacobs, L.C., Kalkman, A.J., Kraayeveld, J.R., and Radelaar, S. in Materials Reliability in Microelectronics VII, ed. Clement, J.J., Keller, R.R., Krisch, K.S., Sanchez, J.E. Jr., and Suo, Z. (Mat.Res.Res.Proc.473, Pittsburgh, PA, 1997) pp. 255–266.Google Scholar
8. Verbruggen, A.H., van den Homberg, M.J.C., Jacobs, L.C., Kalkman, A.J., Kraayeveld, J.R., and Radelaar, S. in Stress Induced Phenomena in Metallization: Fourth International Workshop, ed. Okabayashi, H., Shingubara, S., and Ho, P.S. (AIP Conf.Proc. 418, Woodbury, NY, 1998) pp. 135–146.10.1063/1.54635Google Scholar
9. d'Heurle, F.M., Gangulee, A., Aliotta, C.F., and Ranieri, V.A., J.Appl.Phys. 46, 4845 (1975).10.1063/1.321515Google Scholar
10. Rosenberg, R., J.Vac.Sci.Tech. 9, 263 (1972).Google Scholar
11. Rosenberg, R., Batson, P.E., Bruley, J., Splinter, S.J., and Muller, D.A. in Stress Induced Phenomena in Metallization: Fourth International Workshop, ed. Okabayashi, H., Shingubara, S., and Ho, P.S. (AIP Conf.Proc. 418, Woodbury, NY, 1998) pp. 127–134.10.1063/1.54682Google Scholar