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Electromechanical Properties of Lead-Based Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

A. L. Kholkin
Affiliation:
Dept. of Ceramics and Materials Eng., Rutgers University, Piscataway, NJ 08854, U.S.A.
K. G. Brooks
Affiliation:
Laboratory of Polymers and Interfaces, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
D. V. Taylor
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
N. Setter
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, CH- 1015 Lausanne, Switzerland
A. Safari
Affiliation:
Dept. of Ceramics and Materials Eng., Rutgers University, Piscataway, NJ 08854, U.S.A.
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Abstract

Piezoelectric properties of Pb(Zr,Ti)O3 (PZT) and PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT) films are investigated by interferometric technique combined with conventional dielectric and polarization measurements. It is shown that the piezoelectric d33 coefficient of both materials can be expressed based on their polarization and dielectric constant values using an equation for the electrostriction biased by the polarization. The obtained values of electrostriction coefficients are nearly field-independent and significantly smaller than in bulk materials of the same composition. Polarization offset is observed in PZT films subjected to bipolar fatigue, UV illumination and poling at high temperature, and is explained based on the pinning of ferroelectric domains in preferred orientations. The piezoelectric properties of rhombohedral PZT films are found to depend on their texture. The highest piezoelectric coefficient is observed in (100) oriented films, which have smaller polarization as compared to films having (111) preferred orientation. This difference is explained by the different values of electrostriction coefficients in materials with different textures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Kholkin, A. L., Ferroelectrics (in press).Google Scholar
2. Kholkin, A., Tantigate, C., and Safari, A., Integr. Ferroelectr. 22, p. 515 (1998).Google Scholar
3. Zavada, G., Fendler, J. H., and Trolier-McKinstry, S., J. Appl. Phys. 81, p. 7480 (1997).Google Scholar
4. Zhang, Q. M., Pan, W. Y., Jang, S. J., and Cross, L. E., J. Appl. Phys. 64, p. 6445 (1988).Google Scholar
5. Taylor, D. V., Brooks, K. G., Kholkin, A. L., Damjanovic, D., and Setter, N., Proc. of the 5 Int. Conf on Electronic Ceramics (Aveiro, Portugal, 1996), p. 341.Google Scholar
6. Tantigate, C. and Safari, A., Microelectron. Eng. 29, p. 115 (1995).Google Scholar
7. Nomura, C. and Uchino, K., Ferroelectrics 41, p. 117 (1982).Google Scholar
8. Li, J.-F., Viehland, D. D., Tani, T., Lakeman, C. D. E., and Payne, D. A., J. Appl. Phys. 75, p. 442 (1994).Google Scholar
9. Kholkin, A. L., Colla, E. L., Tagantsev, A. K., Taylor, D. V., and Setter, N., Appl. Phys. Lett. 68, p. 2577 (1996).Google Scholar
10. Warren, W. L., Pike, G. E., Tuttle, B. A., and Dimos, D., Appl. Phys. Lett. 70, p. 2010 (1997).Google Scholar
11. Dimos, D., Warren, W. L., Sinclair, M. B., Tuttle, B. A., and Schwartz, R. W., J. Appl. Phys. 76, p. 4305 (1994).Google Scholar
12. Kholkin, A. L. and Setter, N., Appl. Phys. Lett. 71, p. 2854 (1997).Google Scholar
13. Du, X., Belegundu, U., and Uchino, K., Jpn. J. Appl. Phys. 36, p. 5580 (1997).Google Scholar
14. Park, S.-E. and Shrout, T., J. Appl. Phys. 82, p. 1804 (1997).Google Scholar
15. Brooks, K., Klissurska, R., Moeckli, P., and Setter, N., Microelectron. Eng. 29, p. 293 (1995).Google Scholar
16. Harris, G. B., Phil. Mag. 43, p. 113 (1952).Google Scholar