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Electroluminescent Devices Based on Zero- and One- Dimensional Silicon Structures

Published online by Cambridge University Press:  15 February 2011

A. G. Nassiopoulos ,
P. Photopoulos ,
V. Ioannou-Sougleridis ,
S. Grigoropoulos  and
D. Papadimitriou
A. G. Nassiopoulos
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, 15310 Aghia Paraskevi Attikis, Athens-Greece.
P. Photopoulos
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, 15310 Aghia Paraskevi Attikis, Athens-Greece.
V. Ioannou-Sougleridis
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, 15310 Aghia Paraskevi Attikis, Athens-Greece.
S. Grigoropoulos
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, 15310 Aghia Paraskevi Attikis, Athens-Greece.
D. Papadimitriou
Affiliation:
National Technical University of Athens, Physics Department, Zografou Campus, GR 157 73, Athens-Greece
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Abstract

Stable solid state electroluminescent devices, based on one- and two- dimensional silicon structures were fabricated. One- dimensional structures were in the form of silicon nanopillars on a silicon substrate, fabricated by using lithography and etching techniques. Isolation and planarization of nanopillars was made by using polymethyl methacrylate (PMMA), which is a non conducting polymer, totally transparent in the visible region. Gold (Au) was used as top contact metal and the back ohmic contact was based on aluminum. Zero-dimensional structures were in the form of silicon nanocrystallites, deposited by low pressure chemical vapour deposition (LPCVD) on a thin SiO2 layer, thermally grown on silicon. Gold and aluminum were also used as contact metals. In both cases the devices showed stable electroluminescence at room temperature, visible with the naked eye. Devices based on nanocrystallites showed more uniform emission. The onset of light emission was between 5 and 7 Volts. The devices were checked for several hours of continuous operation and no degradation was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 663
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Canham, L.T., Appl. Phys. Lett. 57, 1046, (1990)Google Scholar
2.Sanders, G. D. and Chang, Y.C., Phys. Rev. B, 45(16), 9202, (1992)Google Scholar
3.Ossicini, S., Fasolino, A., Bernardini, F., Phys. Rev. Lett. 72, 1044, (1994)Google Scholar
4.Shimizu-Iwayama, Tsutomu, Nakao, Setsuo and Saitoh, Kazuo, Appl. Phys. Lett., 65 (14), 1814, (1994)Google Scholar
5.Takagi, H., Ogawa, H., Yamajaki, Y., Ishijaki, A. and Nakagiri, T., Appl. Phys. Lett 56(24), 2379, (1990)Google Scholar
6.Arnaud d'Avitaya, F., Vervoort, L., Bassani, F., Ossicini, S., Fasolino, A., Bernardini, F., Europhysics Letters, 31, 25, 1995.Google Scholar
7.Liu, H.I., Biegelsen, D.K., Ponce, F.A., Johnson, N.M. and Pease, R.F.N., Appl. Phys. Lett. 64(11), 1383,(1994)Google Scholar
8.Fischer, P.B., Dai, K., Chen, E. and Chen, S.Y., J. Vac. Sci. Thechnol. B11, 2524, (1993)Google Scholar
9.Nassiopoulos, A.G., Grigoropoulos, S., Gogolides, E. and Papadimitriou, D.Appl. Phys. Lett., 66, 1115, (1995)Google Scholar
10.Nassiopoulos, A. G., Grigoropoulos, S., Papadimitriou, D., Gogolides, E., Phys. Stat. Sol., (b) 190, 91, (1995)Google Scholar
11.Nassiopoulos, A.G., Grigoropoulos, S. and Papadimitriou, D., Electrochemical Soc. Proceed. 95–25, 297, (1995)Google Scholar
12.Katsuba, S., Kazuchits, N., De Cesare, G., La Monica, S., Maiello, G., Proverbio, E. and Ferrari, A., Mat. Res. Soc. Symp. Proceed., 358 93, (1995)Google Scholar
13.Chu, An-Shyang, Zaidi, Saleem H. and Brueck, S.R.J., Appl. Phys. Lett. 63(7), 905, (1993)Google Scholar
14.Takahashi, Y., Furuta, T., Ono, Y., Ishiyama, T., Jpn. J. Appl. Phys., 34, 950, (1995)Google Scholar
15.Saeta, P.N. and Gallagher, A.C., J. Appl. Phys. 77(9), 4639, (1995)Google Scholar
16.Lockwood, D.J., Baribeau, J.M. and Lu, Z.H., Advanced Luminescent Materials edited by Lockwood, D.J., Fauchet, P.M., Koshida, N. and Brueck, S.R.J., Electrochem. Soc. Proceed. 95–25, 339 (1995)Google Scholar
17.Nassiopoulos, A.G., Grigoropoulos, S. and Papadimitriou, D., Appl. Phys. Lett., 69(15), (1996).Google Scholar