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Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  30 June 2011

Atsushi Nishikawa ,
Naoki Furukawa ,
Dong-gun Lee ,
Kosuke Kawabata ,
Takanori Matsuno ,
Yoshikazu Terai  and
Yasufumi Fujiwara
Atsushi Nishikawa
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering,Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
Naoki Furukawa
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering,Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
Dong-gun Lee
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering,Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
Kosuke Kawabata
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering,Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
Takanori Matsuno
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering,Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
Yoshikazu Terai
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering,Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
Yasufumi Fujiwara
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering,Osaka Universtiy, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
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Abstract

We investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

Keywords

Euoptical propertieschemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1342: Symposium V – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2011 , mrss11-1342-v02-08
Copyright
Copyright © Materials Research Society 2011

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References

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