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Electrochemical Atomic-Layer Epitaxy: Electrodeposition of III-V and II-VI Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

Travis L. Wade ,
Billy H. Flowers Jr ,
Raman Vaidyanathan ,
Kenneth Mathe ,
Clinton B. Maddox ,
Uwe Happek  and
John L. Stickney
Travis L. Wade
Affiliation:
Department of Chemistry, University of Georgia, Athens, Georgia30602
Billy H. Flowers Jr
Affiliation:
Department of Chemistry, University of Georgia, Athens, Georgia30602
Raman Vaidyanathan
Affiliation:
Department of Chemistry, University of Georgia, Athens, Georgia30602
Kenneth Mathe
Affiliation:
Department of Chemistry, University of Georgia, Athens, Georgia30602
Clinton B. Maddox
Affiliation:
Department of Physics, University of Georgia, Athens, Georgia30602
Uwe Happek
Affiliation:
Department of Physics, University of Georgia, Athens, Georgia30602
John L. Stickney
Affiliation:
Department of Chemistry, University of Georgia, Athens, Georgia30602
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Abstract

Electrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.

Many II-VI and a few III-V compounds have been formed by EC-ALE. TI-VI films such as CdSe, CdS, and CdTe have been successfully formed. In addition, deposition of III-V compounds of InAs and InSb are being explored, along with initial studies of GaAs deposition. Depositions of the I-VI systems are better understood so this report will focus on the III-V's, particularly InAs and InSb.

Building compounds an atomic layer at a time lends electrochemical-ALE to nanoscale technology. Deposited thickness ranged from a few nanometers to a few hundred. The films are typically characterized by atomic-force microscopy (AFM), X-ray diffraction (XRD), electron microprobe analysis (EPMA) and ellipsometry. InAs deposits are also characterized by infrared reflection absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 145
Copyright
Copyright © Materials Research Society 2000

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