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Electric-Field Dependence of Electroreflectance and Photocurrent Spectra at Visible Wavelengths in Movpe-Grown InAlGaP Multiple Strained Quantum-Well Structures

Published online by Cambridge University Press:  21 February 2011

I. J. Fritz ,
O. Blum ,
R. P. Schneider Jr. ,
A. J. Howard  and
D. M. Follstaedt
R. P. Schneider Jr.
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
A. J. Howard
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
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Abstract

We present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap Inx(AlyGa1-y)1-xP/Inx’(Aly’Ga1-y’)1-x’P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6°-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped Ino 5AI0.5P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46≤x≤0.52 and 0≤y≤0.4, corresponding to bandgaps in the red to yellow range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. Our results show that these new materials are promising for visible-wavelength optical modulator applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 525
Copyright
Copyright © Materials Research Society 1994

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References

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