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Electrical Study of Device Arrays on Thin Film Vanadium Dioxide
Published online by Cambridge University Press: 26 February 2011
Abstract
The VO2 phase of vanadium oxide is known to exhibit large changes in the electrical and optical properties in the vicinity of the structural phase transition at 68C. Here, we report on the fabrication and study of thin film vanadium oxide (VO2) devices deposited on R-plane sapphire. Thin films prepared by electron beam evaporation have been processed by photolithography into two-terminal strips for electrical measurements. Measurements on such specimens exhibit reproducibility across a chip, in addition to hysteretic transport, and a one-to-two orders of magnitude change in the resistance in the vicinity of the structural transition. In sum, these experiments show that e-beam evaporation of VO2 constitutes a simple and useful approach to realizing devices from this technologically important material.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T10-18
- Copyright
- Copyright © Materials Research Society 2007