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Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition.

Published online by Cambridge University Press:  26 February 2011

S. P. Heluani ,
G. Simonelli ,
M. Villafuerte ,
G. Juarez ,
A. Tirpak ,
G. Braunstein  and
F. Vignolo
S. P. Heluani
Affiliation:
Laboratorio de Física del Sólido, Departamento de Física, Fac. de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, Argentina.
G. Simonelli
Affiliation:
Laboratorio de Física del Sólido, Departamento de Física, Fac. de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, Argentina.
M. Villafuerte
Affiliation:
Laboratorio de Física del Sólido, Departamento de Física, Fac. de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, Argentina.
G. Juarez
Affiliation:
Laboratorio de Física del Sólido, Departamento de Física, Fac. de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, Argentina.
A. Tirpak
Affiliation:
Department of Physics University of Central Florida, Orlando, FL, 32816, USA.
G. Braunstein
Affiliation:
Department of Physics University of Central Florida, Orlando, FL, 32816, USA.
F. Vignolo
Affiliation:
Laboratorio de Ablación Láser, Fac. de Ingeniería, Universidad de Buenos Aires, Argentina
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Abstract

Structural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.25
Copyright
Copyright © Materials Research Society 2005

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References

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