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Electrical Properties of Thin Intermetallic Platinum-Gallium Films Grown by MBE on Gallium Arsenide and Silicon.

Published online by Cambridge University Press:  25 February 2011

L. P. Sadwick ,
R. M. Ostrom ,
B. J. Wu ,
K. L. Wang  and
R. S. Williams
L. P. Sadwick
Affiliation:
Department of Electrical Engineering 7732 Boelter Hall, UCLA, Los Angeles, CA 90024
R. M. Ostrom
Affiliation:
Department of Electrical Engineering 7732 Boelter Hall, UCLA, Los Angeles, CA 90024
B. J. Wu
Affiliation:
Department of Electrical Engineering 7732 Boelter Hall, UCLA, Los Angeles, CA 90024
K. L. Wang
Affiliation:
Department of Electrical Engineering 7732 Boelter Hall, UCLA, Los Angeles, CA 90024
R. S. Williams
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, 2080 Young Hall, UCLA, Los Angeles, CA 90024.
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Abstract

Thin films of the platinum-gallium (Pt-Ga) family have been grown on gallium arsenide (GaAs) and silicon (Si) by molecular beam epitaxy (MBE). A partial list of potential uses for these and similar structures is high temperature stable photodetectors, Schottky andOhmic contacts, epitaxial buried contacts, and field effect transistors. In this work the electrical properties of Pt2Ga, PtGa, and PtGa2 on both GaAs andSi will be presented. The resistivity of these thin films has been found to depend on the crystal quality and phase of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 291
Copyright
Copyright © Materials Research Society 1989

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References

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