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Electrical Properties Of S+ Implantation in Si GaAs

Published online by Cambridge University Press:  26 February 2011

Guanqun Xia ,
Anmin Guan ,
Haiyang Geng  and
Weiyuan Wang
Guanqun Xia
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Anmin Guan
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Haiyang Geng
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Weiyuan Wang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
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Abstract

The electrical properties of S+ implanted in SI GaAs have been studied. The rapid diffusion and redistribution of S+ implanted in GaAs after conventional thermal annealing (CTA) depends not on conventional diffusion of S+ or VAs, but on the enhanced diffusion by ion implantation. By employing rapid thermal annealing (RTA) techniques enhanced diffusion can be restrained, redistribution of S+ implantation can be decreased greatly and a thin active layer suitable for fabricating GaAs MESFET devices can be obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 499
Copyright
Copyright © Materials Research Society 1991

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References

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