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Electrical Properties of Mesa Diodes on Epitaxial GaAs/Si

Published online by Cambridge University Press:  28 February 2011

K.L. Jiao ,
A.J. Soltyka ,
W.A. Anderson  and
S.M. Vernon
K.L. Jiao
Affiliation:
Center for Electronic and Electro- optic Materials, State University of New York at Buffalo, 217C Bonner Hall Amherst, NY 14260
A.J. Soltyka
Affiliation:
Center for Electronic and Electro- optic Materials, State University of New York at Buffalo, 217C Bonner Hall Amherst, NY 14260
W.A. Anderson
Affiliation:
Center for Electronic and Electro- optic Materials, State University of New York at Buffalo, 217C Bonner Hall Amherst, NY 14260
S.M. Vernon
Affiliation:
Spire Corp., Patriots Park, Bedford, MA 01730
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Abstract

Deep level transient spectroscopy (DLTS), current-voltage- temperature (I-V-T), capacitance-voltage-temperature (C-V-T), C-T and photoreflectance spectroscopy (PRS) were used to compare the electrical properties of GaAs p-n junctions epitaxially grown by MOCVD on GaAs and Si substrates. EL2 was detected for both GaAs/GaAs and GaAs/Si structures. For GaAs/Si, a continuous distribution of trap levels was also observed which could be ascribed to misfit defects. I-V-T data revealed the saturation current of GaAs/Si diodes to be four orders in amplitude higher than for GaAs/GaAs ones. Different temperature dependences were found in saturation current density, barrier height and capacitance between the two structures. A multistep tunneling model is utilized in explaining the results for GaAs/Si. C-T measurements indicated the free carriers not to be frozen-out for GaAs/Si at the freeze-out temperature of GaAs/GaAs. A defect- induced bandgap tailing effect might be responsible for this effect, verified by PRS tests.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 481
Copyright
Copyright © Materials Research Society 1990

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