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Electrical Properties of Au/Bi4-xLaxTi3O12 Thin Film/Si Structures and Reduction of Interface States

Published online by Cambridge University Press:  26 February 2011

Atsushi Kohno  and
Hiroyuki Tomari
Atsushi Kohno
Affiliation:
[email protected], Fukuoka University, Department of Applied Physics, 8-19-1 Nanakuma, Jounan-ku, Fukuoka, N/A, 814-0180, Japan, +81-92-871-6631, +81-92-865-6030
Hiroyuki Tomari
Affiliation:
[email protected], Fukuoka Univ., Department of Applied Physics, Japan
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Abstract

Sub-100nm-Thick Polycrystalline Bi4-xLaxTi3O12 (BLT) thin films have been formed on silicon substrates by sol-gel and spin-coating techniques. The analysis of X-ray reflectivity for the BLT/Si structure showed that the BLT film density was slightly lower than the ideal value and the interfacial layer was formed. By Fourier transform infrared spectroscopy (FT-IR) it is confirmed that the formation of the interfacial layer was due to oxidation of Si. Clockwise hysteresis was observed in capacitance-voltage (C-V) characteristics for Au/BLT/p-Si structures at a frequency range between 1 MHz – 1 kHz. The frequency dispersion of the C-V curve was caused by a large amount of interface states at BLT/Si interface. As the film was crystallized at 550°C for 2 h the maximum interface state density was ∼3.4×1011 cm-2ev-1 at 1 kHz. Also, the negative gate-voltage shift of the C-V curve from the ideal curve and the gate-bias dependence of the flat-band voltage were observed, resulting in the presence of undesirable positive charges in the film and the electron injection to the traps near the BLT/Si interface. By post-annealing of the device at 400 °C in oxygen atmosphere the interface states (fast sates) were successfully reduced to a third of the initial value and also the positive charges were significantly diminished.

Keywords

ferroelectricfilmelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-45
Copyright
Copyright © Materials Research Society 2006

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