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Electrical Properties in Cvd Diamond Films

Published online by Cambridge University Press:  21 February 2011

S. Zhao ,
K.K. Gan ,
H. Kagan ,
R. Kass ,
R. Malchow ,
F. Morrow ,
W. Palmer ,
C. White ,
L.S. Pan  and
S. Han
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S. Zhao
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
K.K. Gan
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
H. Kagan
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
R. Kass
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
R. Malchow
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
F. Morrow
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
W. Palmer
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
C. White
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210;
L.S. Pan
Affiliation:
Laser Division, Lawrence Livermore National Laboratory, Livermore, CA 94550;
S. Han
Affiliation:
Laser Division, Lawrence Livermore National Laboratory, Livermore, CA 94550;
D. Kania
Affiliation:
Laser Division, Lawrence Livermore National Laboratory, Livermore, CA 94550;
M. Plano
Affiliation:
Crystallume Inc., Menlo Park, CA 94025;
M. Landstrass
Affiliation:
Crystallume Inc., Menlo Park, CA 94025;
M. Lee
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854;
S. Kim
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854;
F. Sannes
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854;
S. Schnetzer
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854;
R. Stone
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854;
G. Thomson
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854;
Y. Sugimoto
Affiliation:
KEK National Laboratory, Tsukuba-shi, Ibaraki-ken, Japan305;
A. Fry
Affiliation:
Physics Division, Superconducting Super Collider Laboratory, Dallas, TX 75237;
S. Kanda
Affiliation:
Department of Physics, University of Hawaii, Honolulu, HI 96822
S. Olsen
Affiliation:
Department of Physics, University of Hawaii, Honolulu, HI 96822
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Abstract

The electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 257
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. CVD diamond films presented in this paper were fabricated by Norton Diamond Films and Crystallume Inc. in 1991. The films were grown by two different processes, DC Arc Jets and microwave enhanced CVD, and varied in optical quality from opaque to translucent.Google Scholar
2. Pan, L. S. et al. , J. Appl. Phys., accepted for publication (1993).Google Scholar
3. Zhao, S., PhD thesis, The Ohio State University (1993).Google Scholar
4. Franklin, M. et al. , Nucl. Instr. and Math., A315, 39 (1992).CrossRefGoogle Scholar
5. Plano, M. A. et al. , submitted to Appl. Phys. Lett. (1993).Google Scholar
6. Pan, L. S. et al. , in the Proceedings of MRS Spring Meeting, Symposium F (1993).Google Scholar