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Electrical Properties and Hydrogen Incorporation Scheme of a-Si:H/a-Si1−xCx:H Multilayers

Published online by Cambridge University Press:  26 February 2011

Masahiro Yoshimoto ,
Takashi Fuyuki  and
Hiroyuki Matsunami
Masahiro Yoshimoto
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606, Japan
Takashi Fuyuki
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606, Japan
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Abstract

Multilayers of a-Si:H/a-Si1−xCx:H was fabricated by a glow discharge method. The barrier layer using a-Si1−xCx:H was typicallg 20 Å thick, and the thickness of the well layer was changed from 11 to 510 Å. Hydrogen incorporation scheme in the well layer of a-Si:H was investigated by infrared absorption measurements. Structures of the a-Si:H layer were turned out to be strongly influenced by its thickness. Electron transport properties across the multilayer were studied. Tunneling current was observed when the barrierlayer thickness became narrow. Using a novel structure, it turned out that tunneling electron has higher energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 367
Copyright
Copyright © Materials Research Society 1988

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