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Electrical Characterization of Ultra-Thin Oxides Grown on Silicon Surfaces Cleaned in Ultra-High Vacuum

Published online by Cambridge University Press:  10 February 2011

C. L. Petersen  and
F. Grey
C. L. Petersen
Affiliation:
Mikroelektronik Centret (MIC), The Technical University of Denmark, Bldg. 345 East, DK-2800 Lyngby, Denmark [email protected]
F. Grey
Affiliation:
Mikroelektronik Centret (MIC), The Technical University of Denmark, Bldg. 345 East, DK-2800 Lyngby, Denmark
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Abstract

We have investigated the oxidation of clean reconstructed silicon surfaces in-situ using a fourpoint probe technique. The measured conductance variations, on Si(111) and Si(100) surfaces as a function of oxygen exposure are markedly different. On Si(100) surfaces, the conductance displays a rapid fall during the first 100 L exposure to O2, followed by a slower steady decrease at higher oxygen exposures. This behavior is similar for both n-type arid p-type silicon. The conductance of Si(111) surfaces increases significantly at the onset of the oxidation. This conductance increase is found on both n-type and p-type Si(111) samples. We interpret this as being due to the molecular precursor which is known to form in the peroxy bridge position.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 293
Copyright
Copyright © Materials Research Society 1997

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References

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