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Electrical Characterization of Ultra-Shallow Junctions Formed by Diffusion From a CoSi2 Diffusion Source

Published online by Cambridge University Press:  15 February 2011

F. La Via  and
E. Rimini
F. La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, Catania, Italy.
E. Rimini
Affiliation:
Physics Department, Corso Italia 57, Catania, Italy.
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Abstract

Ultra-Shallow p+/n and n+/p junctions were fabricated using a Silicide-As-Diffusion-Source (SADS) process and a low thermal budget (800÷900 °C). A thin layer (50 nm) of CoSi2 was implanted with As and BF2 and subsequently diffused at different temperatures and times to form two Ultra-Shallow junctions with a junction depth of 14 and 20 nm. These diodes were extensively investigated by I-V and C-V measurements in the range of temperature between 80 and 500 K. TEM delineation was used to controll the junction uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 493
Copyright
Copyright © Materials Research Society 1996

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References

1 Alperin, M. E., Holloway, T. C., Haken, R. A., Gosmeyer, C. D., Karnaugh, R. V. and Parmantie, W. D. IEEE Trans. Electron. Devices 32, 141 (1985).Google Scholar
2 Shone, F. C., Saraswat, K. C. and Plummer, J. D. IEDM Tech. Dig., 407 (1985).Google Scholar
3 Liu, R., Williams, D. S., and Lynch, W. T. J.Appl. Phys. 63, 1990 (1988).Google Scholar
4 Via, F. La, Privitera, V., Lombardo, S., Spinella, C., Raineri, V., Rimini, E., Baeri, P. and Ferla, G. J. Appl. Phys. 69, 726 (1991).Google Scholar
5 Via, F. La, Privitera, V., Spinella, C. and Rimini, E. Semicond. Sci. Technol. 8, 1196 (1993).Google Scholar
6 Hove, L. Van den, Maex, K., Hobbs, L., Lippens, P., Keersmaecker, R. de, Probst, V. and Schaeber, H., Appl. Surf. Sci. 38, 430 (1989).Google Scholar
7 Via, F. La, Spinella, C. and Rimini, E., Semicond. Sci. Technol. 10, 1362 (1995).Google Scholar
8 Chenand, B. S. Chen, M. C., J. Appl. Phys. 74(5), 3605(1993).Google Scholar
9 Wang, Q., Osburn, C. M. and Canovai, C. A., IEEE Trans. on Electr. Dev. 39(11), 2486 (1992).Google Scholar
10 Liu, R., Williams, D. S. and Lynch, W. T., J. Appl. Phys. 63(6), 1990 (1988).Google Scholar
11 Goodman, A. M., J. Appl. Phys. 34, 329 (1963).Google Scholar
12 Sullivan, J. P., Tung, R. T., Pinto, M. R. and Graham, W. R., J. Appl. Phys. 70(12), 7403 (1991).Google Scholar
13 Tung, R. T., Physical Review B, 45(23), 13509 (1992).Google Scholar