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Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range

Published online by Cambridge University Press:  10 February 2011

L. Bürkle ,
F. Fuchs ,
R. Kiefer ,
W. Pletschen ,
R. E. Sah  and
J. Schmitz
L. Bürkle
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraβe 72, D-79108 Freiburg, Germany
F. Fuchs
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraβe 72, D-79108 Freiburg, Germany Email: [email protected]
R. Kiefer
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraβe 72, D-79108 Freiburg, Germany
W. Pletschen
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraβe 72, D-79108 Freiburg, Germany
R. E. Sah
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraβe 72, D-79108 Freiburg, Germany
J. Schmitz
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraβe 72, D-79108 Freiburg, Germany
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Abstract

Abstract

InAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 75
Copyright
Copyright © Materials Research Society 2000

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