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Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer
Published online by Cambridge University Press: 03 September 2012
Abstract
In this paper the electrical properties of epitaxial CoSi2 on Si obtained by solid-state reaction of a Ti/Co bimetallic layer are investigated. Low temperature resistivity, magnetoresistance and Hall data are presented. The CoSi2ISi Schottky diodes are characterised by current - voltage and capacitance - voltage measurements at temperatures varying between - 100°C and 60°C.
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- Copyright © Materials Research Society 1994
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