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Electrical and thermal stress analysis of In2O3-Ga2O3-ZnO thin-film transistors

Published online by Cambridge University Press:  31 January 2011

Mami Fujii ,
Tomoki Maruyama ,
Masahiro Horita ,
Kiyoshi Uchiyama ,
Ji Sim Jung ,
jang yeon kwon  and
Yukiharu Uraoka
Mami Fujii
Affiliation:
[email protected]
Tomoki Maruyama
Affiliation:
[email protected], Nara Institute of Science and Technology, Graduate school of Materials Science, Ikoma, Nara, Japan
Masahiro Horita
Affiliation:
[email protected], Nara Institute of Science and Technology, Graduate school of Materials Science, Ikoma, Nara, Japan
Kiyoshi Uchiyama
Affiliation:
[email protected], Nara Institute of Science and Technology, Graduate school of Materials Science, Ikoma, Nara, Japan
Ji Sim Jung
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-do, Korea, Republic of
jang yeon kwon
Affiliation:
[email protected], Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-do, Korea, Republic of
Yukiharu Uraoka
Affiliation:
[email protected], Nara Institute of Science and Technology, Graduate school of Materials Science, Ikoma, Nara, Japan
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Abstract

Degradation of In2O3-Ga2O3-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.

Keywords

deviceselectrical propertiesoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-11
Copyright
Copyright © Materials Research Society 2010

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References

1 Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H.: Nature 432, 488 (2004).10.1038/nature03090Google Scholar
2 Nomura, Kenji, Kamiya, Toshio, Ohta, Hiromichi, Hirano, Masahiro, and Hosono, Hideo, Applied Physics Letters 93, 192107 (2008).10.1063/1.3020714Google Scholar
3 Cho, Doo-Hee, Park, Sang-Hee Ko, Yang, Shinhyuk, Byun, Chunwon, Cho, Kyoung Ik, Ryu, Minki, Chung, Sung Mook, Cheong, Woo-Seok, Yoon, Sung Min, and Hwang, Chi-Sun, IMID 2009 Tech. Dig, 26-1, 318–321, (2009)Google Scholar
4 Sameshima, Toshiyuki, Sakamoto, Kenji, Satoh, Mitsuru, Thin Solid Films 335, 138–141 (1998).10.1016/S0040-6090(98)00887-6Google Scholar
5 Kamiya, Toshio, Hiramatsu, Hidenori, Nomura, Kenji, Hosono, Hideo, J. Electroceram, 17: 267–275 (2006)10.1007/s10832-006-6710-9Google Scholar
6 Fujii, Mami, Uraoka, Yukiharu, Fuyuki, Takashi, Jung, Ji Sim, and Kwon, Jang Yeon, Jpn. J. Appl. Phys, 48, 04C091 (2009)Google Scholar
7 Fung, T. C., Chuang, C. S., Chen, C., Abe, K., Kumomi, H. and Kanicki, J.: AM-FPD '08, Dig. Tech. Pap., p. 251, (2008)Google Scholar
8 Hosono, Hideo, Nomura, Kenji, Ogo, Youichi, Uruga, Tomoya, Kamiya, Toshio, J. Of NonCryst. Solids, 354, 2796–2800 (2008)10.1016/j.jnoncrysol.2007.10.071Google Scholar
9 Hsieh, Hsing-Hung, Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo, and Wu, Chung-Chih, Appl. Phys. Lett., 92, 133503 (2008)10.1063/1.2857463Google Scholar
10 Kimura, M., Nakanishi, T., Nomura, K., Kamiya, T., and Hideo, H.: Appl. Phys. Lett. 92, 133512 (2008).10.1063/1.2904704Google Scholar
11 Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Yamaguchi, Hirotaka, and Kaneko, Setsuo, Jpn. J. Appl. Phys. 48, 011301 (2009)10.1143/JJAP.48.011301Google Scholar
12 Kohan, A. F., Ceder, G., and Morgan, D., Walle, Chris G. Van de, Phys. Rev. B 61, 15 019, (2000)10.1103/PhysRevB.61.15019Google Scholar
13 Ahn, Byung Du, Shin, Hyun Soo, Kim, Hyun Jae, Park, Jin-Seong, and Jeong, Jae Kyeong, Appl. Phys. Lett., 93, 203506, (2008)10.1063/1.3028340Google Scholar