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Electrical and Structural Study on Ion Implanted Poly(Dimethylsilylene-Co-Methylphenylsilylene)

Published online by Cambridge University Press:  26 February 2011

R. A. Basheer ,
A. H. Hamdi  and
R. Y. Kwor
R. A. Basheer
Affiliation:
General Motors Research Laboratories, Warren, MI 48090-9055
A. H. Hamdi
Affiliation:
General Motors Research Laboratories, Warren, MI 48090-9055
R. Y. Kwor
Affiliation:
Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, IN 46556
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Abstract

The effects of ion implantation on the electrical and structural properties of poly(dimethylsilylene-co-methylphenylsilylene), DMIOPS, thin films have been investigated. Ionic species of krypton, arsenic, fluorine, chlorine, and sulfur were implfgted at energies ranging from 35 to 200 key and with doses of up to 1 × 1016 ion/cm2. The conductivity of the polymer increased upon implantation reaching a maximum value of 9.6 × 10−6 (Ω cm)−1 for the case of arsenic ion at a dose of 1 × 1016 ion/cm2 and energy of 100 keV. The results showed that ion implantation induced conduction in DUMPS was primarily due to structural modifications of the material brought about by the energetic ions. Infrared analysis and Auger electron spectroscopy showed evidence for the formation of a silicon carbide-like structure upon implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 337
Copyright
Copyright © Materials Research Society 1988

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References

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