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Electrical and Optical Properties of Yb, Er doped GaAs

Published online by Cambridge University Press:  21 February 2011

T. Benyattou ,
D. Seghier ,
G. Brémond ,
S. Moneger ,
A. Kalboussi ,
G. Marrakchi ,
G. Guillot ,
C. Lhomer ,
B. Lambert  and
Y. Toudic
...Show all authors
T. Benyattou
Affiliation:
INSA de Lyon, Bit 502, LPM URA CNRS 358, 20 Av Albert Einstein 69621 Villeurbanne Célex, France
D. Seghier
Affiliation:
INSA de Lyon, Bit 502, LPM URA CNRS 358, 20 Av Albert Einstein 69621 Villeurbanne Célex, France
G. Brémond
Affiliation:
INSA de Lyon, Bit 502, LPM URA CNRS 358, 20 Av Albert Einstein 69621 Villeurbanne Célex, France
S. Moneger
Affiliation:
INSA de Lyon, Bit 502, LPM URA CNRS 358, 20 Av Albert Einstein 69621 Villeurbanne Célex, France
A. Kalboussi
Affiliation:
INSA de Lyon, Bit 502, LPM URA CNRS 358, 20 Av Albert Einstein 69621 Villeurbanne Célex, France
G. Marrakchi
Affiliation:
INSA de Lyon, Bit 502, LPM URA CNRS 358, 20 Av Albert Einstein 69621 Villeurbanne Célex, France
G. Guillot
Affiliation:
INSA de Lyon, Bit 502, LPM URA CNRS 358, 20 Av Albert Einstein 69621 Villeurbanne Célex, France
C. Lhomer
Affiliation:
CNET/LAB/OMC/MPA, 22301 Lannion, France
B. Lambert
Affiliation:
CNET/LAB/OMC/MPA, 22301 Lannion, France
Y. Toudic
Affiliation:
CNET/LAB/OMC/MPA, 22301 Lannion, France
A. Le Corre
Affiliation:
CNET/LAB/OMC/MPA, 22301 Lannion, France
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Abstract

In this paper we report results from electrical and optical measurements carried out on GaAs:Yb, Er.

For GaAs:Yb electrical experiments such as photoconductivity (PC) and Photo Induced Current Transient Spectroscopy (PICTS) show that there is a level at 0.65eV related to Yb. This explains why no Yb3+ photoluminescence (PL) emission is detected, the recombination energy of the trapped excitons is too low (≈ 0.6eV) to excite the Yb3+ internal transition(≈ 1.24eV). We also present results on Er doped GaAs materials. From PL experiments we deduce an estimate of 10−19cm2 for the stimulated emission cross section. By PICTS and PC, we have evidenced a trap at 0.67eV related to Er ions in GaAs. And we think that in this case, the rare earth ions are excited via formation of bound excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 163
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Benyanou, T., Seghier, D., Guillon, G., Moncorgé, R., Galtier, P., and Charasse, M. N., Appl. Phys. Lett. 58, 2132(1991).Google Scholar
2. Kozaneci, A., and Grozschel, R., J. AppL Phys. 64. 3315(1988).Google Scholar
3. Klein, P.B., Solid State Commun. 65, 1097(1988).Google Scholar
4. Benyattou, T., Seghier, D., Guillot, G., Galtier, P., Charasse, M.N., and Moncorgd, R., in Impurities. Defects- and Diffusion in Semiconductors: Bulk and Layered Structures edited by Wolford, D. J., Bemholc, J., and Hailer, E. E. (MRS, Pittsburgh, PA, 1990), Vol. 163, pp.69–74.Google Scholar
5. Thonke, K., Pressel, K., Bohnert, G., Stapor, A., Weber, J., Moser, M., Malassioti, A., Hangleiter, A., and Scholtz, F., Semicond. Sci. Technol. 5,1124(1990).Google Scholar
6. Seghier, D., Benyattou, T., Bremond, G., Ducroquet, F., Marchand, I. J., and Guillot, G. published in the procedings of the 16th International Conference on Defects in Semiconductors. Bethleem (USA), 1991.Google Scholar
7. Lambert, B., Toudic, Y., Grandpierre, G., Rupert, A., and Corre, A. Le, Electron. Lem 24 1447(1988).Google Scholar
8. Galtier, P., Pocholle, J.P., Charasse, M.N., Benyattou, T., Guillot, G., Cremoux, B. de, and Hirtz, J.P., Appl. Phys. Conden. Matter 2, 479(1990).Google Scholar
9. Hurtes, C., Boulou, M., Mitonneau, A., and Bois, D., Appl. Phys. Lett. 32, 821(1978).Google Scholar
10. Taguchi, A., Nakagome, H., and Takahei, K., J. Appl Phys. 68, 3390(1990).Google Scholar
11. Seghier, D., Benyattou, T., Bremond, G., Durocquet, F., Gregoire, J., Guillot, G., Lhomer, C., Lambert, B., Toudic, Y., Corre, A. La, App. Phys. Latt. 60, 983(1992).Google Scholar
12. Whitney, P.S., Uwai, K., Nakagome, H. and Takahei, K. App.Phys.Lett. 53, 2074(1988)Google Scholar
13. Raczhnska, J., Frone, K., Langer, L.M., Lamanska, A. and Stapor, A., Appl. Phys. Lett. 53,761(1988).Google Scholar
14. Ennen, H., Kaufmann, U., Pomrenke, G., Windscheif, J., and Axmann, A., J. Cryst. Growth 64, 165(1983).Google Scholar
15. Benyattou, T., Seghier, D., Guillot, G., Moncorgé, R., Galtier, P., and Charasse, M. N., Appl. Phys. Lett. 60, 350(1992).Google Scholar