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Electrical and Optical Properties of LiNbO3/CaCu3Ti4O12 Heterostructures on Si

Published online by Cambridge University Press:  10 June 2015

Javad R. Gatabi ,
Kevin A. Lyon ,
Shafiqur Rahman ,
Hanu Arava ,
Juan S Rojas-Ramirez ,
R. K. Pandey  and
Ravi Droopad
Javad R. Gatabi
Affiliation:
Material Science, Engineering and Commercialization, Texas State University, San Marcos, TX 78666, U.S.A.
Kevin A. Lyon
Affiliation:
Department of Physics, Texas State University, San Marcos, TX 78666, U.S.A.
Shafiqur Rahman
Affiliation:
Material Science, Engineering and Commercialization, Texas State University, San Marcos, TX 78666, U.S.A.
Hanu Arava
Affiliation:
Department of Physics, Texas State University, San Marcos, TX 78666, U.S.A.
Juan S Rojas-Ramirez
Affiliation:
Ingram School of Engineering, Texas State University, San Marcos, TX 78666, U.S.A.
R. K. Pandey
Affiliation:
Ingram School of Engineering, Texas State University, San Marcos, TX 78666, U.S.A.
Ravi Droopad
Affiliation:
Material Science, Engineering and Commercialization, Texas State University, San Marcos, TX 78666, U.S.A. Ingram School of Engineering, Texas State University, San Marcos, TX 78666, U.S.A.
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Abstract

The role of ferroelectric LiNbO3 (LNB) in altering the frequency dependence of the capacitance of CaCu3Ti4O12 (CCTO) thin films has been investigated. A cost effective spin coating deposition process was used to integrate the oxide heterostructures onto silicon substrates. This study showed that the frequency stability of the CCTO/LNB structure was much improved when the crystallization conditions and physical dimension of each layer were optimized. To integrate this structure with current silicon technology, heterostructures of CCTO and LNB thin films were fabricated on HF terminated Si using chemical solution deposition. It was found that the order of deposition of the two layers was important for the structural quality of the heterostructures with the CCTO layer followed by the LNB layer being the preferred structure. In addition to improvement of the capacitance variation with frequency, the heterostructures also provide a path to tuning the frequency of operation.

Keywords

dielectricelectrical propertiesferroelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2136761
Copyright
Copyright © Materials Research Society 2015 

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