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Electrical and Optical characteristics of ZnO:Al Thin Films

Published online by Cambridge University Press:  01 February 2011

M.J. Keum ,
J.S. Yang ,
I.H. Son ,
S.K. Shin ,
H.W. Choi ,
W.S. Lee ,
M.K. Choi ,
S.N. Chu  and
K.H. Kim
M.J. Keum
Affiliation:
School of Electrical & Electronic Eng., Kyungwon Univ., Kyunggi-do 461-701, Korea
J.S. Yang
Affiliation:
School of Electrical & Electronic Eng., Kyungwon Univ., Kyunggi-do 461-701, Korea
I.H. Son
Affiliation:
Dept. of Electrical Eng., Shinsung College, Chungnam 343-861, Korea
S.K. Shin
Affiliation:
Dept. of Electrical Eng., Donghae Univ., Kangwon-do 240-713, Korea
H.W. Choi
Affiliation:
School of Electrical & Electronic Eng., Kyungwon Univ., Kyunggi-do 461-701, Korea
W.S. Lee
Affiliation:
Dept. of Electric Control System, Kyungwon College, Kyunggi-do 461-701, Korea
M.K. Choi
Affiliation:
Dept. of Electric Control System, Kyungwon College, Kyunggi-do 461-701, Korea
S.N. Chu
Affiliation:
Dept. of Electric Control System, Kyungwon College, Kyunggi-do 461-701, Korea
K.H. Kim
Affiliation:
School of Electrical & Electronic Eng., Kyungwon Univ., Kyunggi-do 461-701, Korea
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Abstract

ZnO with hexagonal wurzite structure is a wide band gap n-type semiconductor. ZnO films can be prepared to obtain high transparency in the visible range, low resistivity, chemical stability and stability in hydrogen plasma including many foreign materials such as Al, In. In this work, we prepared ZnO:Al thin film by Facing Targets Sputtering system with Zn metal target and ZnO:Al(Al2O3 2wt%, 4wt%) ceramic target at total working gas pressure 1mTorr, substrate temperature R.T.. We evaluated the crystallographic, electrical and optical characteristics of the ZnO:Al films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V5.12
Copyright
Copyright © Materials Research Society 2002

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References

1. Igasaki, Y. and Saito, H., J.Apply. Phys., 70, 3613 (1991)Google Scholar
2. Minami, T., Nanto, H., and Takata, S., Thin Solid Films, 124, pp. 43–47 (1985)Google Scholar
3. Banerjce, A., Yang, J. and Guha, S., Mater. Res. Soc. Symp. Proc., 467, 711 (1997)Google Scholar
4. Minami, T., Nanto, H., and Takata, S., Appl.Phys.Lett. 41, 954, (1982)Google Scholar
5. Ito, K. and Nakaxawa, T., Jpn. J. Appl. Phys. 22, L245 (1983)Google Scholar
6. Maniv, S. and Zangvil, A., “Controlled texture of reactively RF sputtered ZnO thin film”, J. Apply. Phys., 49 (1978) 2787 Google Scholar
7. Kim, K.H., Kong, S.H., Keum, M.J., Son, I.H., Naoe, M., Nakagawa, S., “Thin Film Properties by Facing Targets Sputtering system”, Apply. Sur. Sci., Vol. 169, No. 170, pp. 409–413 (2001)Google Scholar
8. Yang, J.S., Keum, M.J., Kim, K.H., presented at the FES2001, Nagoya, Japan (2001)(unpublished)Google Scholar
9. Tsuji, Takashi and Hirohashi, Mitsuji, Apply. Sur. Sci., 157 (2000) 47 Google Scholar