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Elastic Modulus and Hardness as Derived from Nanoindentation of Ni And Mo Films Prepared by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  21 February 2011

A. Wroblewski
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark On leave from Moscow Engineering Physics Institute
N. Chechenin
Affiliation:
Institute of Nuclear Physics, Moscow State University, 119899 Moscow, Russia
J. BØttiger
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
J. Chevallier
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
N. Karpe
Affiliation:
Department of Solid State Physics, Royal Institute of Technology, 100 44 Stockholm, Sweden
J. P. Krog
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
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Abstract

Using ion beam assisted deposition, 1.5–2.2 μm thick molybdenum and nickel films were prepared on silicon substrates. Some films were found to be strongly textured. By changing the rate of Ar+ bombardment during the deposition, the resulting in-plane film stresses could be changed from being strongly tensile to strongly compressive. Using nanoindentation, the hardness and elastic modulus were measured for all films, but no major influence of the film stress or different textures could be found. The elastic modulus of the Ni films was found to be close to its polycrystalline bulk value, and that of Mo was found to be about 70% of its polycrystalline bulk value.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. see “Thin films: Stresses and Mechanical Properties III”, Materials Research Society Symposium Proceeding, vol. 239 (1992)Google Scholar
2. Nix, W.D., Metall. Trans. 20A (1989) 2217 Google Scholar
3. Cammarata, R.C. and Sieradzki, K., Phys. Rev. Lett. 62 (1989) 2005 Google Scholar
4. Yang, W.M.C., Tsakalakos, T. and Hilliard, J.E., J. Appl. Phys. 48 (1977) 876 Google Scholar
5. Ziemann, P. and Kay, E., J. Vac. Sci. Techn. Al (1983) 512 Google Scholar
6. Roy, R.A., Petkie, R., Yee, D.S., Karasinski, J. and Boulding, A., Mater. Res. Soc. Symp. Proc. 128 (1989)17 Google Scholar
7. Handbook of Semiconductor Wafer Cleaning Technology, ed. Kern, W., Noyes Publications, 1993 Google Scholar
8. Ohring, M., The material science of thin films, Academic Press, 1992, pp. 416 Google Scholar
9. Oliver, W.C and Pharr, G.M., J. Mater. Res. 7 (1992) 1564 Google Scholar
10. Smithells, C., Metals Reference Book, Butterworths, London, 4:th ed, 1967 Google Scholar