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Effects of thermal annealing in the properties of PECVD a-SiC layers

Published online by Cambridge University Press:  17 March 2011

L.F. Marsal ,
J. Pallares ,
A. Orpella ,
D. Bardés ,
J. Puigdollers  and
R. Alcubilla
L.F. Marsal
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
J. Pallares
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
A. Orpella
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
D. Bardés
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
J. Puigdollers
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
R. Alcubilla
Affiliation:
Departament d'Enginyeria Electrònica.Universitat Rovira i Virgili, Tarragona, Spain
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Abstract

Effects of thermal annealing in the properties of PECVD amorphous-Si0.8C0.2:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed Si0.8C0.2:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A23.7
Copyright
Copyright © Materials Research Society 2000

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References

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