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Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current

Published online by Cambridge University Press:  01 February 2011

Hiroshi Kambayashi ,
Takahiro Wada ,
Nariaki Ikeda  and
Seikoh Yoshida
Hiroshi Kambayashi
Affiliation:
[email protected], The Furukawa Electric Co., Ltd., Yokohama R&D Laboratories, 2-4-3 Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan, +81-45-311-1218, +81-45-316-6374
Takahiro Wada
Affiliation:
[email protected]
Nariaki Ikeda
Affiliation:
[email protected]
Seikoh Yoshida
Affiliation:
[email protected]
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Abstract

We have reported on the stress effects of the SiNx passivation film on AlGaN/GaN heterojunction field effect transistors (HFETs). The AlGaN/AlN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD). We first investigated the dependences between SiNx films and the refractive index of these. As a result, the stress type of the SiNx films was all Tensile. Moreover, the refractive index of SiNx increased, the stress was decreasing and almost invariable over refractive index 2.1. Furthermore, we fabricated some kinds of AlGaN/GaN HFETs and estimated the gate-leakage current and the current collapse of HFET. As a result, we confirmed the relationship between the stress of passivation film and gate-leakage current, and that the low stress SiNx film with a high-refractive index can suppress both a gate-leakage current and a current collapse.

Keywords

passivationIII-Vstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF05-03
Copyright
Copyright © Materials Research Society 2006

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References

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