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Effects of Rapid Thermal Processing on Mbe GaAs on Si

Published online by Cambridge University Press:  25 February 2011

A. Ito ,
A. Kitagawa ,
Y. Tokuda ,
A. Usami ,
H. Kano ,
H. Noge  and
T. Wada
A. Ito
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Kitagawa
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Y. Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Kano
Affiliation:
Toyota Central Research and Development Laboratory Inc., Nagakute, Aichi 480–11, Japan
H. Noge
Affiliation:
Toyota Central Research and Development Laboratory Inc., Nagakute, Aichi 480–11, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

Variations of electron traps in molecular-beam-epitaxial (MBE) GaAs layers grown on Si substrates by rapid thermal processing (RTP) have been investigated with deep level transient spectroscopy (DLTS). RTP was performed at 760 – 910 °C for 9s with Si02 encapsulant. In contrast with the layer on GaAs, the traps AI(Ec – 0.65eV) and A2(Ec – 0.81eV) are observed in the layer on Si. The trap EL2h, one of the EL2 family, is produced by RTP in the layer on Si. Some GaAs surfaces were etched to prove the deeper region. In the surface region, the concentrartion of EL2h is comparable to that of EL2 produced by RTP in the layer on GaAs. On the other hand, in ∿ 1 μm below the surface, the concentration of EL2h is about ten times as large as that of EL2. It is speculated that the stress from the GaAs/Si interface enhances the production of the EL2h concentration. In addition to the EL2, the traps R1(Ec – 0.23 eV), R2(Ec – 0.40 eV), R3(Ec – 0.43eV) and R4(Ec – 0.56 eV) are produced by RTP in the GaAs grown on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 413
Copyright
Copyright © Materials Research Society 1989

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References

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