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Effects of Pulsed Laser Irradiation on Thermal Oxides of Silicon

Published online by Cambridge University Press:  15 February 2011

D. Lloyd Crosthwait ,
Rajiv R. Shah ,
George A. Brown  and
Robert Mays Jr.
D. Lloyd Crosthwait
Affiliation:
Semiconductor Research and Development Laboratories, Texas Instruments Incorporated, P.O. Box 225012, Dallas, Texas, 75265
Rajiv R. Shah
Affiliation:
Semiconductor Research and Development Laboratories, Texas Instruments Incorporated, P.O. Box 225012, Dallas, Texas, 75265
George A. Brown
Affiliation:
Semiconductor Research and Development Laboratories, Texas Instruments Incorporated, P.O. Box 225012, Dallas, Texas, 75265
Robert Mays Jr.
Affiliation:
Semiconductor Research and Development Laboratories, Texas Instruments Incorporated, P.O. Box 225012, Dallas, Texas, 75265
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Abstract

The electrical effects associated with pulsed laser irradiation of thermal oxides of silicon were investigated. Three of the functions performed by thermal oxides are control of field effects, junction passivation and electrical isolation. Representative oxide thicknesses suitable for these applications were studied: ≈ 100 nm; ≈ 500 nm and ≥, 1.0 μm respectively. The oxides were irradiated by a repetitively Q-switched Nd 3+:YAG laser operated at the fundamental frequency. The key laser parameters of energy and power density were varied over a wide range, from no change to the onset of discernible change and irreversible damage. The range of energy densities over which the oxide was not electrically degraded was established for each thickness of the oxide. This range of energy densities is compared to the useful range of energy densities for annealing polysilicon and for activating an implant through an oxide. The electrical data was obtained using a mercury probe and through the analysis of a large number of MOS capacitors formed on the irradiated oxides. Parameters measured include: breakdown voltages, surface state charge densities and flat band voltages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 399
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Narayan, J. “Laser Annealing Under the Oxide Layers in Silicon,” Appl. Phy. Lett. 37(1) 66–68(1980).CrossRefGoogle Scholar
2. Tamura, H., Miyao, M. and Tokuyama, T. “Laser-Annelaing Behavior of a Phosphorus-Implanted Silicon Substrate covered with a SiO2 Film” J. App. Phys. 50(5) 3783–3784 (1979).CrossRefGoogle Scholar
3. Hill, C., “Laser Annealing of Device Structures,” Laser and Electron Beam Processing of Electronic Materials, Proceedings of the Electrochemical Society, 80–1, 27–43 (1979).Google Scholar
4. Grove, A. S., “Physics and Technology of Semiconductor Devices,” J. Wiley and Sons, Inc., Chpt. 9, 271–276 (1967).Google Scholar