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The Effects of Particle Adhesion in Chemical Mechanical Polishing

Published online by Cambridge University Press:  01 February 2011

Zhenyu Lu ,
S.V. Babu  and
Egon Matijević
Zhenyu Lu
Affiliation:
Departments of Chemistry and Chemical Engineering Center for Advanced Materials ProcessingClarkson University, Potsdam, NY 13699
S.V. Babu
Affiliation:
Departments of Chemistry and Chemical Engineering Center for Advanced Materials ProcessingClarkson University, Potsdam, NY 13699
Egon Matijević
Affiliation:
Departments of Chemistry and Chemical Engineering Center for Advanced Materials ProcessingClarkson University, Potsdam, NY 13699
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Abstract

The properties of abrasive particles, and their interactions with surface films to be polished, play a key role in chemical mechanical polishing (CMP). This study applies the packed column technique for the investigation of the adhesion phenomena at the particle/film interface as a function of different slurry chemistries relevant to polishing processes. Well-defined dispersions, including uniform spherical silica and silica cores coated with nanosized ceria, as well as calcined alumina were used to represent slurry abrasives, and copper or glass beads to simulate wafers or discs. It was shown that the pH and slurry flow rate had significant effects on particle attachment and removal. The results of deposition of silica particles on copper beads in the presence of various concentrations of H2O2 and of detachment from copper beads of alumina particles, loaded at different pH values, had strong correlations to the polish rates of the metal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F3.5
Copyright
Copyright © Materials Research Society 2003

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