Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-02T21:30:41.941Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier

Published online by Cambridge University Press:  10 February 2011

Dong Joon Kim ,
Soon Pil Jeong ,
Yong Tae Kim  and
Jong-Wan Park
Dong Joon Kim
Affiliation:
semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, [email protected] Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
Soon Pil Jeong
Affiliation:
semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, [email protected]
Yong Tae Kim
Affiliation:
semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, [email protected]
Jong-Wan Park
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
Get access

Abstract

Amorphous Ta-Si-N thin film was deposited by dc sputterring of Ta5Si3 target in (Ar+N2) atmosphere. The crystal structure and the thermal stability of Ta-Si-N thin films were investigated by XRD, RBS, AES, Nomarski microscope, and TEM. When the concentration of nitrogen in Ta-Si-N thin film was higher than 40 at.%, the Ta-Si-N thin film remained the amorphous state after the annealing at 1100°C for 60 min. In this case, the Cu diffusion was prevented by the amorphous Ta-Si-N thin film even if the annealing temperature increased up to 900°C for 30 min. Whereas, the Ta-Si-N thin film with nitrogen concentration less than 40 at. % was transformed from the amorphous to the polycrystalline TaSi2 phases after the annealing at 900°C for 60 min and failed to prevent the Cu diffusion after the annealing at 700°C for 30 min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 331
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kwon, C.S., Kim, D.J., and Kim, Y.T., Mat. Res. Symp. Proc., 355, 441 (1995)Google Scholar
2. Kim, Y.T., Lee, C.W., and Lee, C., J. Vac. Sci. & Technol., B12, 69 (1994)Google Scholar
3. Kwon, C.S., Kim, Y.T., Min, S.-K., Lee, C., Lee, J.Y., and Park, Y.W., Mat. Res. Soc. Symp. Proc., 318, 335 (1994)Google Scholar
4. Lee, C.W. and Kim, Y.T., Appl. phys. Lett., 62, 3312 (1993)Google Scholar
5. Sasaki, K., Noya, A., and Umezawa, T., Jpn. J. Appl. Phys., 29, 1043(1990)Google Scholar
6. Weber, E.R., Appl. Phys. A, 1(1983)Google Scholar
7. Broniatowski, A., Phys. Rev. Lett., 62, 3074(1989)Google Scholar
8. Wittmer, M., J. Vac. Sci. Technol., A2, 273 (1984)Google Scholar
9. kolawa, E., Pokela, P. J., Reid, J. S., Chen, J. S., Ruiz, R. P., and Nicolet, M.-A., IEEE Electron Device Letters, 12, 321(1991)Google Scholar
10. Reid, J. S., Kolawa, E., Ruiz, R. P. and Nicolet, M.-A., Thin Solid films, 236, 319(1993)Google Scholar