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The Effects of Modulation on an RF Discharge in Silane and on the Deposited a-Si:H

Published online by Cambridge University Press:  25 February 2011

L. J. Overzet ,
J. T. Verdeyen ,
R. M. Roth  and
F. F. Carasco
L. J. Overzet
Affiliation:
University of Illinois, Gaseous Electronics Laboratory, 607 E. Healey, Champaign, IL 61820
J. T. Verdeyen
Affiliation:
University of Illinois, Gaseous Electronics Laboratory, 607 E. Healey, Champaign, IL 61820
R. M. Roth
Affiliation:
Amoco Corporation, Corporate Research Department, P.O. Box 400, Naperville, IL 60566
F. F. Carasco
Affiliation:
Amoco Corporation, Corporate Research Department, P.O. Box 400, Naperville, IL 60566
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Abstract

The time evolution of the electron density and the optical emission intensity in response to a square wave modulated RF excitation of helium-silane mixtures has been studied and compared to that for the more conventional CW discharge. In addition, the films deposited from CW and modulated RF glows have-been compared on the basis of absorption coefficients and photoconductivities. Films deposited from modulated glows at substrate temperatures below 200°C have significantly smaller optical bandgaps than those deposited from comparable CW discharges. The bulk electron density in the modulated discharge undergoes a complex temporal variation and its time average value can be significantly larger than that in the CW glow despite the lower average power. A dissociative attachment process involving silane radicals, SiHn (n = 1 to 3), is identified as the most probable cause.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 321
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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