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Effects of Mechanical Strain on Amorphous Silicon Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

H. Gleskova ,
S. Wagner ,
W. Soboyejo  and
Z. Suo
H. Gleskova
Affiliation:
Princeton University, Department of Electrical Engineering
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering
W. Soboyejo
Affiliation:
Department of Mechanicaland Aerospace Engineering, Princeton, NJ 08544
Z. Suo
Affiliation:
Department of Mechanicaland Aerospace Engineering, Princeton, NJ 08544
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Abstract

We evaluated a-Si:H TFTs fabricated on polyimide foil under uniaxial compressive or tensile strain. The strain was induced by bending or stretching. All experiments confirmed that the on-current and hence the electron linear mobility depend on strain å as μ = μ0 (1 + 26·ε), where tensile strain has a positive sign. Upon the application of stress the mobility changes instantly and then remains unchanged in measurements up to 40 hours. In the majority of the TFTs the off-current and leakage current do not change. In tension, the TFTs fail mechanically at a strain of ∼ 3x10-2 but recover if the strain is released ‘immediately’.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A3.4
Copyright
Copyright © Materials Research Society 2002

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