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Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

Published online by Cambridge University Press:  03 March 2015

S. Upadhyay ,
A Mandal ,
A. Basu ,
P. Singh  and
S. Chakrabarti
S. Upadhyay
Affiliation:
CRNTS, Indian Institute of Technology Bombay, Mumbai-400076, India
A Mandal
Affiliation:
Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
A. Basu
Affiliation:
IADD, Bhabha Atomic Research Center, Mumbai-400085, India
P. Singh
Affiliation:
IADD, Bhabha Atomic Research Center, Mumbai-400085, India
S. Chakrabarti
Affiliation:
Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
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Abstract

Under controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

Keywords

luminescenceion-implantationIII-V
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1743: Symposium WW – Materials and Radiation Effects for Advanced Nuclear Technologies , 2015 , mrsf14-1743-ww09-04
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Salhi, A., Fortunato, L., Martiradonna, L., Todaro, M. T., Cingolani, R., Passaseo, A., and De Vittorio, M., Semicond. Sci. Technol. 22 (2007) 396–398.CrossRefGoogle Scholar
Shih-Yen, L., Yao-Jen, T., and Si-Chen, L., Jpn. J. Appl. Phys. 40 (2001) L1290–L1292.Google Scholar
Bockelmann, U. and Bastard, G., Physical Review B 42 (1990) 8947.CrossRefGoogle Scholar
Benisty, H., Sotomayor-Torres, C., and Weisbuch, C., Physical Review B 44 (1991) 10945.CrossRefGoogle Scholar
Eliseev, P. G., Li, H., Stintz, A., Liu, G. T., Newell, T. C., Malloy, K. J. and Lester, L. F., Appl. Phys. Lett. 77 (2000) 262–264.CrossRefGoogle Scholar
Ustinov, V. M. and Zhukov, A. E., Semicond. Sci. Technol. 15 (2000) R41–R54.CrossRefGoogle Scholar
Leon, R., Swift, G.M., Magness, B., Taylor, W.A., Tang, Y.S., and Wang, K.L., 2000 Appl. Phys. Lett. 76 2074.Google Scholar
Ribbat, C., Sellin, R., Grundmann, M., Bimberg, D., Sobolev, N.A., and Carmo, M.C., 2001 Electron. Lett. 37 17.CrossRefGoogle Scholar
Sreekumar, R., Mandal, A., Gupta, S.K., and Chakrabarti, S., J. Phys. D: Appl. Phys. 43 (2010) 50530.CrossRefGoogle Scholar
Sreekumar, R., Mandal, A., Chakrabarti, S. and Gupta, S. K., J. Lumin. 153 (2014)109– 117.CrossRefGoogle Scholar
Ilahi, B., Salem, B., Aimez, V., Sfaxi, L., Maaref, H., Morris, D., Nanotechnology 17 (2006) 3707–3709 CrossRefGoogle Scholar
Lu, W., Ji, Y. L., Chen, G. B., Tang, N. Y., Chen, X. S., Shen, S. C., Zhao, Q. X., Willander, M., Appl. Phys. Lett. 83 (2003) 4300–4302 CrossRefGoogle Scholar
Al-Ahmadi, Ameenah, “Quantum Dots—A Variety of New Applications,” InTech, Croatia, 2012.Google Scholar
Adhikary, S., Halder, N., Chakrabarti, S., Majumdar, S., Ray, S. K., Herrera, M., Bonds, M., and Browning, N. D., J. Crys. Gr. 312 (2010) 724–729 CrossRefGoogle Scholar