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Effects of Light-Soaking in a-Si:H Studied by Photoconductivity Response Time

Published online by Cambridge University Press:  26 February 2011

Changhua Qiu ,
Shenfa Qian ,
Daxing Han  and
Jacques Pankove
Changhua Qiu
Affiliation:
Institute of Physics, Chinese Academy of Sciences, P.O.Box 603, Beijing, China
Shenfa Qian
Affiliation:
Institute of Physics, Chinese Academy of Sciences, P.O.Box 603, Beijing, China
Daxing Han
Affiliation:
Institute of Physics, Chinese Academy of Sciences, P.O.Box 603, Beijing, China
Jacques Pankove
Affiliation:
SERI and Dept. of Elect. & Comput. Engin., Univ. of Colorado, Boulder, CO 80309
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Abstract

The temperature and light intensity dependences of photoconductivity(PC) and PC response time(tr) were investigated in undoped a-Si:H. The effects of light-soaking at 110K and 300K on PC and tr are compared. The experimental results suggest that two kinds of metastable centers are induced by lightsoaking: one corresponds to increase in the subband-gap absorption, the other corresponds to the degradation of μτ product.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 195
Copyright
Copyright © Materials Research Society 1988

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