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Effects of Laser Irradiation on Growth and Doping Characteristics of GaAs in Chemical Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

H. K. Dong ,
N. Y. Li  and
C. W. Tu
H. K. Dong
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
N. Y. Li
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
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Abstract

In this paper, we report laser-assisted chemical beam epitaxy (CBE) of GaAs using triethylgallium (TEGa), tris-dimethylaminoarsenic (TDMAAs), and an ar ion laser operating at visible or ultraviolet (UV) wavelength. the laser-assisted growth with TDMAAs, compared to as4 or asH3, shows a wider range of growth enhancement at low substrate temperatures. Unlike CBE of GaAs without laser irradiation, laser-enhanced GaAs growth rate was found to be constant as the V/III incorporation ratio changes. by using diiodomethane (CI2H2) as a dopant gas, the GaAs films with laser irradiation show a much higher hole concentration than those grown simultaneously without laser irradiation at substrate temperatures from 460-530°C. Laser irradiation was also found to enhance silicon incorporation at low temperatures. Photothermal effects are responsible for laser-enhanced growth and silicon doping, but the wider temperature window in laser-enhanced growth and the laser-enhanced carbon incorporation are caused by additional photocatalytic or photochemical effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 373
Copyright
Copyright © Materials Research Society 1995

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